发明申请
- 专利标题： METHOD OF MAKING HIGH ELECTRON MOBILITY TRANSISTOR STRUCTURE
- 专利标题（中）： 制造高电子移动晶体结构的方法
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申请号： US14533864申请日： 2014-11-05
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公开(公告)号： US20150056766A1公开(公告)日： 2015-02-26
- 发明人: Chen-Ju YU , Chih-Wen HSIUNG , Fu-Wei YAO , Chun-Wei HSU , King-Yuen WONG , Jiun-Lei Jerry YU , Fu-Chih YANG
- 申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 主分类号： H01L29/66
- IPC分类号： H01L29/66 ; H01L21/324 ; H01L21/3065 ; H01L21/3205 ; H01L29/205 ; H01L21/321 ; H01L21/225 ; H01L29/20 ; H01L29/201 ; H01L21/02 ; H01L21/3213
摘要：
A method includes epitaxially growing a gallium nitride (GaN) layer over a silicon substrate. The method further includes epitaxially growing a donor-supply layer over the GaN layer. The method further includes forming a source and a drain on the donor-supply layer. The method further includes forming a gate structure between the source and the drain on the donor-supply layer. The method further includes plasma etching a portion of a drift region of the donor-supply layer to a depth of less than 60% of a donor-supply layer thickness. The method further includes depositing a dielectric layer over the donor-supply layer.