发明申请
US20150063544A1 METHOD FOR REMOVING OF RESIDUAL CHARGE, X-RAY IMAGING METHOD AND APPARATUS USING THE METHOD 有权
使用该方法去除残留电荷,X射线成像方法和装置的方法

  • 专利标题: METHOD FOR REMOVING OF RESIDUAL CHARGE, X-RAY IMAGING METHOD AND APPARATUS USING THE METHOD
  • 专利标题(中): 使用该方法去除残留电荷,X射线成像方法和装置的方法
  • 申请号: US14476069
    申请日: 2014-09-03
  • 公开(公告)号: US20150063544A1
    公开(公告)日: 2015-03-05
  • 发明人: Young KIMSunil KIMJaechul PARKKangho LEE
  • 申请人: Samsung Electronics Co. Ltd.
  • 优先权: KR10-2013-0106307 20130904
  • 主分类号: H05G1/30
  • IPC分类号: H05G1/30 G01N23/04
METHOD FOR REMOVING OF RESIDUAL CHARGE, X-RAY IMAGING METHOD AND APPARATUS USING THE METHOD
摘要:
A method of removing residual charge from a photoconductive material includes applying a first voltage to the photoconductive material to form an electrostatic field during a collection operation in which x-rays are irradiated onto the photoconductive material; and applying a second voltage to the photoconductor to reduce an amount of residual charge therein during a removal operation, the second voltage being different from the first voltage. In one or more example embodiments, the photoconductive material may include Mercury Iodine (Hgl2).
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