Abstract:
Disclosed is a method of driving a radiation detection apparatus using a variable voltage applying scheme. In the method, different voltages are applied in a standby step, where radiation is not irradiated onto the radiation detection apparatus, and an irradiation step where the radiation is irradiated. A voltage which is applied in the standby step has an absolute value lower than a voltage which is applied in the irradiation step, and is set to minimize a dark current which is generated in a photoconductor layer of the radiation detection apparatus in the standby step.
Abstract:
A radiation detector and a method of operating the radiation detector. The radiation detector includes: a photoconductive layer between the array substrate and the counter electrode and having a particle-in-binder (PIB) structure in which a photoconductive particle and a binder are mixed; and an optical unit for providing light energy to the photoconductive layer to detrap a charge trapped in an interface between the photoconductive particle and the binder. The light energy includes ultraviolet rays and/or visible rays.
Abstract:
A method and apparatus for detecting an X-ray, the apparatus includes a detector which comprises a pixel array in which a plurality of pixels for detecting an X-ray transmitted by a body to be examined are arranged in a matrix form, a read-out unit which reads out electrical signals corresponding to the detected X-ray from the pixel array, and a reset controller which controls the pixel array to be reset after the X ray is detected, by performing switching so that the plurality of pixels of the pixel array are commonly connected to the reset power source.
Abstract:
Provided is a processing device having improved reliability and power consumption efficiency of analog calculations as well as high cost efficiency due to reduction in a size of a bit-cell, and an electronic system including the processing device. The processing device includes: at least one bit-cell line on which a plurality of bit-cells are connected to each other in series, wherein each of the bit-cells includes: a first magnetic tunnel junction (MTJ) element; a second MTJ element connected to the first MTJ element in parallel; a first switching element connected to the first MTJ element in series; and a second switching element connected to the second MTJ element in series, and wherein on the bit-cell line, two adjacent bit-cells are connected to each other in series in a mirroring structure.
Abstract:
A method of removing residual charge from a photoconductive material includes applying a first voltage to the photoconductive material to form an electrostatic field during a collection operation in which x-rays are irradiated onto the photoconductive material; and applying a second voltage to the photoconductor to reduce an amount of residual charge therein during a removal operation, the second voltage being different from the first voltage. In one or more example embodiments, the photoconductive material may include Mercury Iodine (Hgl2).