发明申请
- 专利标题: ION Implantation with Charge and Direction Control
- 专利标题(中): 离子注入与充电和方向控制
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申请号: US14541314申请日: 2014-11-14
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公开(公告)号: US20150069913A1公开(公告)日: 2015-03-12
- 发明人: Chih-Hong Hwang , Chun-Lin Chang , Nai-Han Cheng , Chi-Ming Yang , Chin-Hsiang Lin
- 申请人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 主分类号: H01J37/317
- IPC分类号: H01J37/317
摘要:
The present disclosure provides for various advantageous methods and apparatus of controlling electron emission. One of the broader forms of the present disclosure involves an electron emission element, comprising an electron emitter including an electron emission region disposed between a gate electrode and a cathode electrode. An anode is disposed above the electron emission region, and a voltage set is disposed above the anode. A first voltage applied between the gate electrode and the cathode electrode controls a quantity of electrons generated from the electron emission region. A second voltage applied to the anode extracts generated electrons. A third voltage applied to the voltage set controls a direction of electrons extracted through the anode.
公开/授权文献
- US09865429B2 Ion implantation with charge and direction control 公开/授权日:2018-01-09