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    Beam Monitoring Device, Method, and System
    2.
    发明申请
    Beam Monitoring Device, Method, and System 有权
    光束监测装置，方法和系统

    公开(公告)号：US20140306119A1

    公开(公告)日：2014-10-16

    申请号：US14317650

    申请日：2014-06-27

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

    Inventor： Chih-Hong Hwang ,  Chun-Lin Chang ,  Nai-Han Cheng ,  Chi-Ming Yang ,  Chin-Hsiang Lin

    IPC: H01J37/244

    CPC classification number: H01J37/244 ,  H01J37/3171 ,  H01J2237/024 ,  H01J2237/24405 ,  H01J2237/24528 ,  H01J2237/24542

    Abstract: A beam monitoring device, method, and system is disclosed. An exemplary beam monitoring device includes a one dimensional (1D) profiler. The 1D profiler includes a Faraday having an insulation material and a conductive material. The beam monitoring device further includes a two dimensional (2D) profiler. The 2D profiler includes a plurality of Faraday having an insulation material and a conductive material. The plurality of Faraday of the 2D profiler are arranged in a pattern that is offset in a direction. The 1D profiler is coupled to a first end of the 2D profiler and extends beyond two adjacent outer edges of the 2D profiler. The beam monitoring device further includes a control arm. The control arm is operable to facilitate movement of the beam monitoring device in the direction.

    Abstract translation: 公开了一种光束监测装置，方法和系统。 示例性束监测装置包括一维（1D）轮廓仪。 1D轮廓仪包括具有绝缘材料和导电材料的法拉第。 光束监测装置还包括二维（2D）轮廓仪。 2D轮廓仪包括具有绝缘材料和导电材料的多个法拉第。 2D轮廓仪的多个法拉第以一个方向偏移的图案排列。 1D轮廓仪耦合到2D轮廓仪的第一端并延伸超过2D轮廓仪的两个相邻的外边缘。 光束监视装置还包括控制臂。 控制臂可操作以便于沿着该方向的光束监视装置的移动。

    Apparatus for Monitoring Ion Implantation
    3.
    发明申请
    Apparatus for Monitoring Ion Implantation 审中-公开
    监测离子注入的装置

    公开(公告)号：US20130280823A1

    公开(公告)日：2013-10-24

    申请号：US13918731

    申请日：2013-06-14

    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

    Inventor： Chun-Lin Chang ,  Chih-Hong Hwang ,  Nai-Han Cheng ,  Chi-Ming Yang ,  Chin-Hsiang Lin

    IPC: H01L21/66

    CPC classification number: H01L22/10 ,  H01J37/244 ,  H01J37/3171 ,  H01J2237/24542 ,  H01J2237/30455 ,  H01J2237/31703 ,  H01L21/265

    Abstract: An apparatus for monitoring an ion distribution of a wafer comprises a first sensor and a sensor. The first sensor, the second senor and the wafer are placed in an effective range of a uniform ion implantation current profile. A controller determines the ion dose of each region of the wafer based upon the detected signal from the first sensor and the second senor. In addition, the controller adjusts the scanning frequency of an ion beam or the movement speed of the wafer to achieve a uniform ion distribution on the wafer.

    Abstract translation: 用于监测晶片的离子分布的装置包括第一传感器和传感器。 将第一传感器，第二传感器和晶片放置在均匀离子注入电流分布的有效范围内。 控制器基于来自第一传感器和第二传感器的检测信号确定晶片的每个区域的离子剂量。 此外，控制器调节离子束的扫描频率或晶片的移动速度，以在晶片上实现均匀的离子分布。

    ION Implantation with Charge and Direction Control
    6.
    发明申请
    ION Implantation with Charge and Direction Control 有权
    离子注入与充电和方向控制

    公开(公告)号：US20150069913A1

    公开(公告)日：2015-03-12

    申请号：US14541314

    申请日：2014-11-14

    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

    Inventor： Chih-Hong Hwang ,  Chun-Lin Chang ,  Nai-Han Cheng ,  Chi-Ming Yang ,  Chin-Hsiang Lin

    IPC: H01J37/317

    CPC classification number: H01J37/3171 ,  H01J3/02 ,  H01J3/022 ,  H01J3/26 ,  H01J37/026 ,  H01J37/06 ,  H01J2237/0041 ,  H01J2237/31705

    Abstract: The present disclosure provides for various advantageous methods and apparatus of controlling electron emission. One of the broader forms of the present disclosure involves an electron emission element, comprising an electron emitter including an electron emission region disposed between a gate electrode and a cathode electrode. An anode is disposed above the electron emission region, and a voltage set is disposed above the anode. A first voltage applied between the gate electrode and the cathode electrode controls a quantity of electrons generated from the electron emission region. A second voltage applied to the anode extracts generated electrons. A third voltage applied to the voltage set controls a direction of electrons extracted through the anode.

    Abstract translation: 本公开提供了控制电子发射的各种有利的方法和装置。 本公开的更广泛形式之一涉及电子发射元件，其包括电子发射器，其包括设置在栅电极和阴极之间的电子发射区。 阳极设置在电子发射区域的上方，并且在阳极上设置电压组。 施加在栅电极和阴极之间的第一电压控制从电子发射区产生的电子量。 施加到阳极的第二电压提取产生的电子。 施加到电压组的第三电压控制通过阳极提取的电子的方向。

    NITROGEN-CONTAINING OXIDE FILM AND METHOD OF FORMING THE SAME
    7.
    发明申请
    NITROGEN-CONTAINING OXIDE FILM AND METHOD OF FORMING THE SAME 有权
    含氮氧化物膜及其形成方法

    公开(公告)号：US20140246758A1

    公开(公告)日：2014-09-04

    申请号：US13782382

    申请日：2013-03-01

    Applicant: Taiwan Semiconductor Manufacturing Company Ltd.

    Inventor： An-Chun Tu ,  Chih-Hong Hwang ,  Yi Hsien Lu ,  Chun-Heng Chen ,  Chen-Chien Li ,  Chih-Jen Wu ,  Kuei-Shu Chang-Liao ,  Chen-Ming Huang

    IPC: H01L21/02

    CPC classification number: H01L21/02178 ,  H01L21/02181 ,  H01L21/02247 ,  H01L21/02249 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/28202 ,  H01L29/518

    Abstract: A method of forming a nitrogen-containing oxide film is disclosed. The method comprises (a) exposing a substrate to a first gas pulse having one of an oxygen-containing gas and a metal-containing gas; (b) exposing the substrate to a second gas pulse having the other of the oxygen-containing gas and the metal-containing gas to form an oxide film over the substrate; and (c) exposing the oxide film to a third gas pulse having a nitrogen-containing plasma to form a nitrogen-containing oxide film, wherein the nitrogen-containing oxide film has a nitrogen concentration between about 0.1 and about 3 atomic percent (at %).

    Abstract translation: 公开了一种形成含氮氧化物膜的方法。 该方法包括（a）将衬底暴露于具有含氧气体和含金属气体中的一种的第一气体脉冲; （b）将衬底暴露于具有另一个含氧气体和含金属气体的第二气体脉冲，以在衬底上形成氧化膜; 和（c）将氧化膜暴露于具有含氮等离子体的第三气体脉冲以形成含氮氧化物膜，其中所述含氮氧化物膜的氮浓度为约0.1至约3原子百分比（原子％ ）。

    Method for Monitoring Ion Implantation
    9.
    发明申请
    Method for Monitoring Ion Implantation 审中-公开
    离子植入监测方法

    公开(公告)号：US20150221561A1

    公开(公告)日：2015-08-06

    申请号：US14684953

    申请日：2015-04-13

    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

    Inventor： Chun-Lin Chang ,  Chih-Hong Hwang ,  Nai-Han Cheng ,  Chi-Ming Yang ,  Chin-Hsiang Lin

    IPC: H01L21/66 ,  H01L21/265

    CPC classification number: H01L22/10 ,  H01J37/244 ,  H01J37/3171 ,  H01J2237/24542 ,  H01J2237/30455 ,  H01J2237/31703 ,  H01L21/265

    Abstract: A method comprises placing a wafer and a ring-shaped beam profiler on a wafer holder, wherein the ring-shaped beam profiler is adjacent to the wafer, moving a first sensor and a second sensor simultaneously with the wafer holder, receiving a first sensed signal and a second sensed signal from the first sensor and the second sensor respectively and adjusting an ion beam generated by an ion beam generator based upon the first sensed signal and the second sensed signal.

    Abstract translation: 一种方法包括将晶片和环形光束轮廓仪放置在晶片保持器上，其中环形光束轮廓仪邻近晶片，与晶片保持器同时移动第一传感器和第二传感器，接收第一感测信号 以及分别来自第一传感器和第二传感器的第二检测信号，并且基于第一感测信号和第二感测信号调整由离子束发生器产生的离子束。

    Apparatus for monitoring ion implantation
    10.
    发明授权
    Apparatus for monitoring ion implantation 有权
    用于监测离子注入的装置

    公开(公告)号：US09006676B2

    公开(公告)日：2015-04-14

    申请号：US13918731

    申请日：2013-06-14

    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

    Inventor： Chun-Lin Chang ,  Chih-Hong Hwang ,  Nai-Han Cheng ,  Chi-Ming Yang ,  Chin-Hsiang Lin

    IPC: H01L21/66 ,  H01J37/244 ,  H01J37/317

    CPC classification number: H01L22/10 ,  H01J37/244 ,  H01J37/3171 ,  H01J2237/24542 ,  H01J2237/30455 ,  H01J2237/31703 ,  H01L21/265

    Abstract: An apparatus for monitoring an ion distribution of a wafer comprises a first sensor and a sensor. The first sensor, the second sensor and the wafer are placed in an effective range of a uniform ion implantation current profile. A controller determines the ion dose of each region of the wafer based upon the detected signal from the first sensor and the second sensor. In addition, the controller adjusts the scanning frequency of an ion beam or the movement speed of the wafer to achieve a uniform ion distribution on the wafer.

    Abstract translation: 用于监测晶片的离子分布的装置包括第一传感器和传感器。 将第一传感器，第二传感器和晶片放置在均匀离子注入电流分布的有效范围内。 控制器基于来自第一传感器和第二传感器的检测信号来确定晶片的每个区域的离子剂量。 此外，控制器调节离子束的扫描频率或晶片的移动速度，以在晶片上实现均匀的离子分布。

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