发明申请
- 专利标题： METHODS OF FORMING PARALLEL WIRES OF DIFFERENT METAL MATERIALS THROUGH DOUBLE PATTERNING AND FILL TECHNIQUES
- 专利标题（中）： 通过双重图案和填充技术形成不同金属材料的平行线的方法
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申请号： US14040191申请日： 2013-09-27
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公开(公告)号： US20150091174A1公开(公告)日： 2015-04-02
- 发明人: James S. Clarke , Anthony C. Schmitz , Richard E. Schenker
- 申请人： James S. Clarke , Anthony C. Schmitz , Richard E. Schenker
- 主分类号： H01L23/48
- IPC分类号： H01L23/48 ; H01L21/768
摘要：
An integrated circuit and a method of forming an integrated circuit including a first dielectric layer including a surface, a plurality of first trenches defined in the dielectric layer surface, and a plurality of first wires, wherein each of the first wires are formed in each of the first trenches. The integrated circuit also includes a plurality of second trenches defined in the dielectric layer surface, and a plurality of second wires, wherein each of the second wires are formed in each of the second trenches. Further, the first wires comprise a first material having a first bulk resistivity and the second wires comprise a second material having a second bulk resistivity, wherein the first bulk resistivity and the second bulk resistivity are different.
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