Invention Application
US20150091616A1 TECHNIQUE TO REALIZE HIGH VOLTAGE IO DRIVER IN A LOW VOLTAGE BICMOS PROCESS 有权
在低电压BICMOS工艺中实现高电压IO驱动器的技术

TECHNIQUE TO REALIZE HIGH VOLTAGE IO DRIVER IN A LOW VOLTAGE BICMOS PROCESS
Abstract:
An IO circuit capable of high voltage signaling in a low voltage BiCMOS process. The IO circuit includes a voltage rail generator circuit that receives a reference voltage and generates a voltage rail supply. A BJT (bi-polar junction transistor) buffer circuit is coupled to the voltage rail generator circuit and a pad. The BJT buffer circuit includes a pull-up circuit and a pull-down circuit. The pull-up circuit receives the voltage rail supply. The pull-down circuit is coupled to the pull-up circuit. The pad is coupled to the pull-up circuit and the pull-down circuit.
Information query
Patent Agency Ranking
0/0