TECHNIQUE TO REALIZE HIGH VOLTAGE IO DRIVER IN A LOW VOLTAGE BICMOS PROCESS
    1.
    发明申请
    TECHNIQUE TO REALIZE HIGH VOLTAGE IO DRIVER IN A LOW VOLTAGE BICMOS PROCESS 有权
    在低电压BICMOS工艺中实现高电压IO驱动器的技术

    公开(公告)号:US20150091616A1

    公开(公告)日:2015-04-02

    申请号:US14043535

    申请日:2013-10-01

    CPC classification number: H03K19/01818 H03K19/017518

    Abstract: An IO circuit capable of high voltage signaling in a low voltage BiCMOS process. The IO circuit includes a voltage rail generator circuit that receives a reference voltage and generates a voltage rail supply. A BJT (bi-polar junction transistor) buffer circuit is coupled to the voltage rail generator circuit and a pad. The BJT buffer circuit includes a pull-up circuit and a pull-down circuit. The pull-up circuit receives the voltage rail supply. The pull-down circuit is coupled to the pull-up circuit. The pad is coupled to the pull-up circuit and the pull-down circuit.

    Abstract translation: 在低电压BiCMOS工艺中能够进行高电压信号的IO电路。 IO电路包括电压轨发生器电路,其接收参考电压并产生电压轨电源。 BJT(双极结晶体管)缓冲电路耦合到电压轨发生器电路和焊盘。 BJT缓冲电路包括一个上拉电路和一个下拉电路。 上拉电路接收电压轨。 下拉电路耦合到上拉电路。 该焊盘耦合到上拉电路和下拉电路。

    Technique to realize high voltage IO driver in a low voltage BiCMOS process
    2.
    发明授权
    Technique to realize high voltage IO driver in a low voltage BiCMOS process 有权
    在低电压BiCMOS工艺中实现高压IO驱动器的技术

    公开(公告)号:US09054695B2

    公开(公告)日:2015-06-09

    申请号:US14043535

    申请日:2013-10-01

    CPC classification number: H03K19/01818 H03K19/017518

    Abstract: An IO circuit capable of high voltage signaling in a low voltage BiCMOS process. The IO circuit includes a voltage rail generator circuit that receives a reference voltage and generates a voltage rail supply. A BJT (bi-polar junction transistor) buffer circuit is coupled to the voltage rail generator circuit and a pad. The BJT buffer circuit includes a pull-up circuit and a pull-down circuit. The pull-up circuit receives the voltage rail supply. The pull-down circuit is coupled to the pull-up circuit. The pad is coupled to the pull-up circuit and the pull-down circuit.

    Abstract translation: 在低电压BiCMOS工艺中能够进行高电压信号的IO电路。 IO电路包括电压轨发生器电路,其接收参考电压并产生电压轨电源。 BJT(双极结晶体管)缓冲电路耦合到电压轨发生器电路和焊盘。 BJT缓冲电路包括一个上拉电路和一个下拉电路。 上拉电路接收电压轨。 下拉电路耦合到上拉电路。 该焊盘耦合到上拉电路和下拉电路。

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