发明申请
- 专利标题： CONDUCTIVITY IMPROVEMENTS FOR III-V SEMICONDUCTOR DEVICES
- 专利标题（中）： III-V半导体器件的电导率改进
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申请号： US14597128申请日： 2015-01-14
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公开(公告)号： US20150123171A1公开(公告)日： 2015-05-07
- 发明人: MARKO RADOSAVLJEVIC , PRASHANT MAJHI , JACK T. KAVALIEROS , NITI GOEL , WILMAN TSAI , NILOY MUKHERJEE , YONG JU LEE , GILBERT DEWEY , WILLY RACHMADY
- 申请人： MARKO RADOSAVLJEVIC , PRASHANT MAJHI , JACK T. KAVALIEROS , NITI GOEL , WILMAN TSAI , NILOY MUKHERJEE , YONG JU LEE , GILBERT DEWEY , WILLY RACHMADY
- 主分类号： H01L29/778
- IPC分类号： H01L29/778 ; H01L29/20
摘要：
Conductivity improvements in III-V semiconductor devices are described. A first improvement includes a barrier layer that is not coextensively planar with a channel layer. A second improvement includes an anneal of a metal/Si, Ge or SiliconGermanium/III-V stack to form a metal-Silicon, metal-Germanium or metal-SiliconGermanium layer over a Si and/or Germanium doped III-V layer. Then, removing the metal layer and forming a source/drain electrode on the metal-Silicon, metal-Germanium or metal-SiliconGermanium layer. A third improvement includes forming a layer of a Group IV and/or Group VI element over a III-V channel layer, and, annealing to dope the III-V channel layer with Group IV and/or Group VI species. A fourth improvement includes a passivation and/or dipole layer formed over an access region of a III-V device.
公开/授权文献
- US09899505B2 Conductivity improvements for III-V semiconductor devices 公开/授权日：2018-02-20
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