Invention Application
- Patent Title: NEGATIVE BITLINE BOOST SCHEME FOR SRAM WRITE-ASSIST
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Application No.: US14077263Application Date: 2013-11-12
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Publication No.: US20150131364A1Publication Date: 2015-05-14
- Inventor: Wei-jer HSIEH , Yangsyu LIN , Hsiao Wen LU , Chiting CHENG , Jonathan Tsung-Yung CHANG
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Main IPC: G11C7/12
- IPC: G11C7/12 ; G11C11/419

Abstract:
A device includes a transistor switch coupled between a bit line voltage node and a ground node and a boost signal circuit coupled to a gate node of the transistor switch, where the boost signal circuit providing a boost signal responsive to a write enable signal. The device also includes a first delay element and a first capacitor in series with the first delay element. The first capacitor has a first end coupled to the bit line voltage node and a second end coupled to the gate node through the first delay element.
Public/Granted literature
- US09070432B2 Negative bitline boost scheme for SRAM write-assist Public/Granted day:2015-06-30
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