Invention Application
- Patent Title: NON-VOLATILE MEMORY
- Patent Title (中): 非易失性存储器
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Application No.: US14180703Application Date: 2014-02-14
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Publication No.: US20150138869A1Publication Date: 2015-05-21
- Inventor: Chih-Kang Chiu , Wei-Chang Wang , Sheng-Tai Young
- Applicant: FARADAY TECHNOLOGY CORPORATION
- Applicant Address: TW Hsinchu
- Assignee: FARADAY TECHNOLOGY CORPORATION
- Current Assignee: FARADAY TECHNOLOGY CORPORATION
- Current Assignee Address: TW Hsinchu
- Priority: TW102141932 20131118
- Main IPC: G11C17/12
- IPC: G11C17/12

Abstract:
A non-volatile memory includes a memory unit. The memory unit includes a first word line, a second word line, a control line, a logic circuit, a bit line, a first cell, and a second cell. The logic circuit has a first input terminal connected to the first word line, a second input terminal connected to the second word line, and an output terminal connected to the control line. The first cell has a control terminal connected to the first word line, a first terminal connected to the control line, and a second terminal selectively connected to the bit line. The second cell has a control terminal connected to the second word line, a first terminal connected to the control line, and a second terminal selectively connected to the bit line.
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