公开(公告)号：US20150138869A1

公开(公告)日：2015-05-21

申请号：US14180703

申请日：2014-02-14

Applicant: FARADAY TECHNOLOGY CORPORATION

Inventor： Chih-Kang Chiu ,  Wei-Chang Wang ,  Sheng-Tai Young

IPC: G11C17/12

CPC classification number: G11C17/123 ,  G11C17/12 ,  G11C17/18

Abstract: A non-volatile memory includes a memory unit. The memory unit includes a first word line, a second word line, a control line, a logic circuit, a bit line, a first cell, and a second cell. The logic circuit has a first input terminal connected to the first word line, a second input terminal connected to the second word line, and an output terminal connected to the control line. The first cell has a control terminal connected to the first word line, a first terminal connected to the control line, and a second terminal selectively connected to the bit line. The second cell has a control terminal connected to the second word line, a first terminal connected to the control line, and a second terminal selectively connected to the bit line.

Abstract translation: 非易失性存储器包括存储器单元。 存储单元包括第一字线，第二字线，控制线，逻辑电路，位线，第一单元和第二单元。 逻辑电路具有连接到第一字线的第一输入端，连接到第二字线的第二输入端和连接到控制线的输出端。 第一单元具有连接到第一字线的控制端子，连接到控制线的第一端子和选择性地连接到位线的第二端子。 第二单元具有连接到第二字线的控制端子，连接到控制线的第一端子和选择性地连接到位线的第二端子。