发明申请
US20150143677A1 SEMICONDUCTOR PROCESSING APPARATUS WITH A CERAMIC-COMPRISING SURFACE WHICH EXHIBITS FRACTURE TOUGHNESS AND HALOGEN PLASMA RESISTANCE
审中-公开
具有陶瓷包覆表面的半导体加工装置，其表面具有断裂韧性和抗氢化物等离子体电阻
- 专利标题： SEMICONDUCTOR PROCESSING APPARATUS WITH A CERAMIC-COMPRISING SURFACE WHICH EXHIBITS FRACTURE TOUGHNESS AND HALOGEN PLASMA RESISTANCE
- 专利标题（中）： 具有陶瓷包覆表面的半导体加工装置，其表面具有断裂韧性和抗氢化物等离子体电阻
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申请号： US13998723申请日： 2013-11-26
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公开(公告)号： US20150143677A1公开(公告)日： 2015-05-28
- 发明人: Jennifer Y. Sun , Ren-Guan Duan , Jie Yuan , Li Xu , Kenneth S. Collins
- 申请人： Jennifer Y. Sun , Ren-Guan Duan , Jie Yuan , Li Xu , Kenneth S. Collins
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 主分类号： H01L21/67
- IPC分类号： H01L21/67
摘要：
A solid solution-comprising ceramic article useful in semiconductor processing, which article may be in the form of a solid, bulk ceramic, or may be in the form of a substrate having a ceramic coating of the same composition as the bulk ceramic material on at least one outer surface. The ceramic article is resistant to erosion by halogen-containing plasmas and provides advantageous mechanical properties. The solid solution-comprising ceramic article is formed from a combination of yttrium oxide and zirconium oxide. The ceramic-comprising article includes ceramic which is formed from zirconium oxide at a molar concentration ranging from about 96 mole % to about 91 mole %, and yttrium oxide at a molar concentration ranging from about 4 mole % to about 9 mole %.
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