Invention Application
- Patent Title: METAL ON ELONGATED CONTACTS
- Patent Title (中): 金属接头
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Application No.: US14572905Application Date: 2014-12-17
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Publication No.: US20150170962A1Publication Date: 2015-06-18
- Inventor: James Walter BLATCHFORD , Scott William JESSEN
- Applicant: Texas Instruments Incorporated
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L21/8238 ; H01L21/28 ; H01L21/283 ; H01L23/50 ; H01L27/092
Abstract:
An integrated circuit containing elongated contacts, including elongated contacts which connect to at least three active areas and/or MOS gates, and including elongated contacts which connect to exactly two active areas and/or MOS gates and directly connect to a first level interconnect. A process of forming an integrated circuit containing elongated contacts, including elongated contacts which connect to at least three active areas and/or MOS gates, using exactly two contact photolithographic exposure operations, and including elongated contacts which connect to exactly two active areas and/or MOS gates and directly connect to a first level interconnect.
Public/Granted literature
- US09312170B2 Metal on elongated contacts Public/Granted day:2016-04-12
Information query
IPC分类:
