发明申请
- 专利标题： 3DIC Interconnect Apparatus and Method
- 专利标题（中）： 3DIC互连装置和方法
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申请号： US14135153申请日： 2013-12-19
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公开(公告)号： US20150179613A1公开(公告)日： 2015-06-25
- 发明人: Shu-Ting Tsai , Dun-Nian Yaung , Jen-Cheng Liu , Chun-Chieh Chuang , Chia-Chieh Lin , U-Ting Chen
- 申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 申请人地址： TW Hsin-Chu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址： TW Hsin-Chu
- 主分类号： H01L25/065
- IPC分类号： H01L25/065 ; H01L23/48 ; H01L25/00 ; H01L21/768 ; H01L23/528 ; H01L23/532
摘要：
An interconnect apparatus and a method of forming the interconnect apparatus is provided. Two integrated circuits are bonded together. A first opening is formed through one of the substrates. A multi-layer dielectric film is formed along sidewalls and a bottom of the first opening. A second opening is formed extending from the first opening to pads in the integrated circuits. A dielectric liner is formed, and the opening is filled with a conductive material to form a conductive plug.
公开/授权文献
- US10056353B2 3DIC interconnect apparatus and method 公开/授权日：2018-08-21
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