-
公开(公告)号：US10682523B2
公开(公告)日：2020-06-16
申请号：US16154154
申请日：2018-10-08
发明人： Shu-Ting Tsai , Jeng-Shyan Lin , Chun-Chieh Chuang , Dun-Nian Yaung , Jen-Cheng Liu , Feng-Chi Hung
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40 , A61N1/39 , H01L25/00 , H01L27/06 , H01L27/146 , H01L21/768 , H01L23/532
摘要： A semiconductor device comprises a first chip bonded on a second chip. The first chip comprises a first substrate and first interconnection components formed in first IMD layers. The second chip comprises a second substrate and second interconnection components formed in second IMD layers. The device further comprises a first conductive plug formed within the first substrate and the first IMD layers, wherein the first conductive plug is coupled to a first interconnection component and a second conductive plug formed through the first substrate and the first IMD layers and formed partially through the second IMD layers, wherein the second conductive plug is coupled to a second interconnection component.
-
公开(公告)号：US10535697B2
公开(公告)日：2020-01-14
申请号：US15803913
申请日：2017-11-06
发明人： Min-Feng Kao , Dun-Nian Yaung , Jen-Cheng Liu , Chun-Chieh Chuang , Feng-Chi Hung , Shuang-Ji Tsai , Jen-Shyan Lin , Shu-Ting Tsai , Wen-I Hsu
IPC分类号： H01L27/14 , H01L27/146 , H01L31/02
摘要： An image sensor structure that includes a first semiconductor substrate having a plurality of imaging sensors; a first interconnect structure formed on the first semiconductor substrate; a second semiconductor substrate having a logic circuit; a second interconnect structure formed on the second semiconductor substrate, wherein the first and the second semiconductor substrates are bonded together in a configuration that the first and second interconnect structures are sandwiched between the first and second semiconductor substrates; and a backside deep contact (BDCT) feature extended from the first interconnect structure to the second interconnect structure, thereby electrically coupling the logic circuit to the image sensors.
-
公开(公告)号：US20190046806A1
公开(公告)日：2019-02-14
申请号：US16154154
申请日：2018-10-08
发明人： Shu-Ting Tsai , Jeng-Shyan Lin , Chun-Chieh Chuang , Dun-Nian Yaung , Jen-Cheng Liu , Feng-Chi Hung
IPC分类号： A61N1/39 , H01L21/768 , H01L23/48 , H01L23/532 , H01L25/00 , H01L27/06 , H01L27/146
摘要： A semiconductor device comprises a first chip bonded on a second chip. The first chip comprises a first substrate and first interconnection components formed in first IMD layers. The second chip comprises a second substrate and second interconnection components formed in second IMD layers. The device further comprises a first conductive plug formed within the first substrate and the first IMD layers, wherein the first conductive plug is coupled to a first interconnection component and a second conductive plug formed through the first substrate and the first IMD layers and formed partially through the second IMD layers, wherein the second conductive plug is coupled to a second interconnection component.
-
公开(公告)号：US20160336367A1
公开(公告)日：2016-11-17
申请号：US15218266
申请日：2016-07-25
发明人： Chun-Chieh Chuang , Dun-Nian Yaung , Jen-Cheng Liu , Wen-De Wang , Keng-Yu Chou , Shuang-Ji Tsai , Min-Feng Kao
IPC分类号： H01L27/146
CPC分类号： H01L27/14623 , H01L27/1462 , H01L27/14621 , H01L27/1464 , H01L27/14645 , H01L27/14685 , H01L27/14689 , H01L31/02161 , H01L31/1868 , Y02E10/50 , Y02P70/521
摘要： A back side image sensor and method of manufacture are provided. In an embodiment a bottom anti-reflective coating is formed over a substrate, and a metal shield layer is formed over the bottom anti-reflective coating. The metal shield layer is patterned to form a grid pattern over a sensor array region of the substrate, and a first dielectric layer and a second dielectric layer are formed to at least partially fill in openings within the grid pattern.
摘要翻译： 提供背面图像传感器及其制造方法。 在一个实施例中，底部抗反射涂层形成在衬底上，并且金属屏蔽层形成在底部抗反射涂层上。 金属屏蔽层被图案化以在衬底的传感器阵列区域上形成网格图案，并且形成第一电介质层和第二电介质层以至少部分填充网格图案内的开口。
-
公开(公告)号：US09401380B2
公开(公告)日：2016-07-26
申请号：US14280379
申请日：2014-05-16
发明人： Chun-Chieh Chuang , Dun-Nian Yaung , Jen-Cheng Liu , Wen-De Wang , Keng-Yu Chou , Shuang-Ji Tsai , Min-Feng Kao
IPC分类号： H01L27/146 , H01L31/0216 , H01L31/18
CPC分类号： H01L27/14623 , H01L27/1462 , H01L27/14621 , H01L27/1464 , H01L27/14645 , H01L27/14685 , H01L27/14689 , H01L31/02161 , H01L31/1868 , Y02E10/50 , Y02P70/521
摘要： A back side image sensor and method of manufacture are provided. In an embodiment a bottom anti-reflective coating is formed over a substrate, and a metal shield layer is formed over the bottom anti-reflective coating. The metal shield layer is patterned to form a grid pattern over a sensor array region of the substrate, and a first dielectric layer and a second dielectric layer are formed to at least partially fill in openings within the grid pattern.
摘要翻译： 提供背面图像传感器及其制造方法。 在一个实施例中，底部抗反射涂层形成在衬底上，并且金属屏蔽层形成在底部抗反射涂层上。 金属屏蔽层被图案化以在衬底的传感器阵列区域上形成网格图案，并且形成第一电介质层和第二电介质层以至少部分填充网格图案内的开口。
-
6.发明授权Semiconductor devices, methods of manufacturing thereof, and image sensor devices 有权半导体器件，其制造方法和图像传感器器件公开(公告)号：US09391114B2
公开(公告)日：2016-07-12
申请号：US14326268
申请日：2014-07-08
发明人： Chun-Chieh Chuang , Dun-Nian Yaung , Feng-Chi Hung , Min-Feng Kao , Jeng-Shyan Lin , Chun-Ming Su , Ching-Chun Wang
IPC分类号： H01L31/00 , H01L27/146 , H01L23/48 , H01L21/48 , H01L23/58 , H01L23/31 , H01L23/522
CPC分类号： H01L27/14636 , H01L21/486 , H01L23/3114 , H01L23/481 , H01L23/522 , H01L23/585 , H01L27/14634 , H01L27/1464 , H01L27/14687 , H01L27/1469 , H01L2224/08145 , H01L2924/0002 , H01L2924/00
摘要： Semiconductor devices, methods of manufacturing thereof, and image sensor devices are disclosed. In some embodiments, a semiconductor device includes a semiconductor chip comprising an array region, a periphery region, and a through-via disposed therein. A guard structure is disposed in the semiconductor chip between the array region and the through-via or between the through-via and a portion of the periphery region. A portion of the guard structure is disposed within a substrate of the semiconductor chip.
摘要翻译： 公开了半导体器件，其制造方法和图像传感器器件。 在一些实施例中，半导体器件包括包括阵列区域，外围区域和设置在其中的通孔的半导体芯片。 保护结构设置在半导体芯片之间的阵列区域和通孔之间，或贯穿通孔与外围区域的一部分之间。 保护结构的一部分设置在半导体芯片的基板内。
-
公开(公告)号：US20160141325A1
公开(公告)日：2016-05-19
申请号：US15005803
申请日：2016-01-25
发明人： Min-Feng Kao , Dun-Nian Yaung , Jen-Cheng Liu , Feng-Chi Hung , Chun-Chieh Chuang , Shuang-Ji Tsai , Jeng-Shyan Lin
IPC分类号： H01L27/146 , H01L31/18
CPC分类号： H01L27/14636 , H01L27/14601 , H01L27/14612 , H01L27/14632 , H01L27/14634 , H01L27/1464 , H01L31/186
摘要： A method and apparatus for a low resistance image sensor contact, the apparatus comprising a photosensor disposed in a substrate, a first ground well disposed in a first region of the substrate, the first ground well having a resistance lower than the substrate, and a ground line disposed in a region adjacent to the first ground well. The first ground well is configured to provide a low resistance path to the ground line from the substrate for excess free carriers in the first region of the substrate. The apparatus may optionally comprise a second ground well having a lower resistance than the first ground well and disposed between the first ground well and the ground line, and may further optionally comprise a third ground well having a lower resistance than the second ground well and disposed between the second ground well and the ground line.
摘要翻译： 一种用于低电阻图像传感器接触的方法和装置，所述装置包括设置在基板中的光电传感器，设置在基板的第一区域中的第一接地阱，具有比基板低的电阻的第一接地阱和地面 设置在与第一接地井相邻的区域中。 第一接地阱被配置为在衬底的第一区域中为过剩自由载流子提供从衬底到接地线的低电阻路径。 该设备可以可选地包括具有比第一接地井更低的电阻并且设置在第一接地井和接地线之间的第二接地井，并且还可以进一步可选地包括具有比第二接地井更低的电阻的第三地下井，并且设置 在第二地面井和地面线之间。
-
公开(公告)号：US20150263214A1
公开(公告)日：2015-09-17
申请号：US14725480
申请日：2015-05-29
发明人： Min-Feng Kao , Dun-Nian Yaung , Jen-Cheng Liu , Chun-Chieh Chuang , Hsiao-Hui Tseng , Tzu-Hsuan Hsu
IPC分类号： H01L31/18 , H01L31/103 , H01L31/02 , H01L27/146
CPC分类号： H01L31/18 , H01L27/1461 , H01L27/14621 , H01L27/14627 , H01L27/1464 , H01L27/14689 , H01L31/02 , H01L31/103 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A method includes forming a first implantation mask comprising a first opening, implanting a first portion of a semiconductor substrate through the first opening to form a first doped region, forming a second implantation mask comprising a second opening, and implanting a second portion of the semiconductor substrate to form a second doped region. The first portion of the semiconductor substrate is encircled by the second portion of the semiconductor substrate. A surface layer of the semiconductor substrate is implanted to form a third doped region of an opposite conductivity type than the first and the second doped regions. The third doped region forms a diode with the first and the second doped regions.
摘要翻译： 一种方法包括形成包括第一开口的第一注入掩模，通过第一开口注入半导体衬底的第一部分以形成第一掺杂区，形成包括第二开口的第二注入掩模，以及注入半导体的第二部分 衬底以形成第二掺杂区域。 半导体衬底的第一部分被半导体衬底的第二部分包围。 注入半导体衬底的表面层以形成与第一和第二掺杂区相反导电类型的第三掺杂区。 第三掺杂区域形成具有第一和第二掺杂区域的二极管。
-
公开(公告)号：US20150187834A1
公开(公告)日：2015-07-02
申请号：US14660605
申请日：2015-03-17
发明人： Chun-Chieh Chuang , Dun-Nian Yaung , Jen-Cheng Liu , Keng-Yu Chou , Pao-Tung Chen , Wen-De Wang
IPC分类号： H01L27/146
CPC分类号： H01L27/14685 , H01L27/1462 , H01L27/14621 , H01L27/14627 , H01L27/1463 , H01L27/1464 , H01L27/14643 , H01L27/14689
摘要： Provided is an image sensor device. The image sensor device includes a substrate having a front side and a back side. The image sensor includes first and second radiation-detection devices that are disposed in the substrate. The first and second radiation-detection devices are operable to detect radiation waves that enter the substrate through the back side. The image sensor also includes an anti-reflective coating (ARC) layer. The ARC layer is disposed over the back side of the substrate. The ARC layer has first and second ridges that are disposed over the first and second radiation-detection devices, respectively. The first and second ridges each have a first refractive index value. The first and second ridges are separated by a substance having a second refractive index value that is less than the first refractive index value.
摘要翻译： 提供了一种图像传感器装置。 图像传感器装置包括具有正面和背面的基板。 图像传感器包括设置在基板中的第一和第二放射线检测装置。 第一和第二放射线检测装置可操作以检测通过背面进入衬底的辐射波。 图像传感器还包括抗反射涂层（ARC）层。 ARC层设置在基板的背面上。 ARC层具有分别设置在第一和第二辐射检测装置上的第一和第二脊。 第一和第二脊各自具有第一折射率值。 第一和第二脊由具有小于第一折射率值的第二折射率值的物质分开。
-
10.发明申请Semiconductor Devices, Methods of Manufacturing Thereof, and Image Sensor Devices 有权半导体器件，其制造方法和图像传感器设备公开(公告)号：US20150115386A1
公开(公告)日：2015-04-30
申请号：US14063953
申请日：2013-10-25
发明人： Chun-Chieh Chuang , Dun-Nian Yaung , Jen-Cheng Liu , Tzu-Hsuan Hsu , Feng-Chi Hung , Min-Feng Kao
IPC分类号： H01L27/146
CPC分类号： H01L27/14636 , H01L27/14603 , H01L27/1463 , H01L27/14632 , H01L27/14634 , H01L27/1464 , H01L27/14687 , H01L27/1469
摘要： Semiconductor devices, methods of manufacturing thereof, and image sensor devices are disclosed. In some embodiments, a semiconductor device comprises a semiconductor chip comprising an array region, a periphery region, and a through-via disposed therein. The semiconductor device comprises a guard structure disposed in the semiconductor chip between the array region and the through-via or between the through-via and a portion of the periphery region.
摘要翻译： 公开了半导体器件，其制造方法和图像传感器器件。 在一些实施例中，半导体器件包括包括阵列区域，外围区域和布置在其中的通孔的半导体芯片。 半导体器件包括设置在半导体芯片之间的保护结构，位于阵列区域和通孔之间，或贯穿通孔与外围区域的一部分之间。
-
-
-
-
-
-
-
-
-
搜索结果
77 条记录 (耗时 0.025 秒)