Invention Application
- Patent Title: EXTREME EDGE AND SKEW CONTROL IN ICP PLASMA REACTOR
- Patent Title (中): ICP等离子体反应器的极端边缘和轴流控制
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Application No.: US14543316Application Date: 2014-11-17
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Publication No.: US20150181684A1Publication Date: 2015-06-25
- Inventor: Samer BANNA , Vladimir KNYAZIK , Kyle TANTIWONG
- Applicant: Applied Materials, Inc.
- Main IPC: H05H1/24
- IPC: H05H1/24 ; H01L21/67 ; H01L21/3065

Abstract:
Embodiments of the present disclosure provide apparatus and methods for improving plasma uniformity around edge regions and/or reducing non-symmetry in a plasma processing chamber. One embodiment of the present disclosure provides a plasma tuning assembly having one or more conductive bodies disposed around an edge region of a substrate support in a plasma processing chamber. The one or more conductive bodies are isolated from other chamber components and electrically floating in the processing chamber near the edge region without connecting to active electrical potentials. During operation, when a plasma is maintained in the plasma processing chamber, the presence of the one or more conductive bodies affects the plasma distribution near the one or more conductive bodies.
Information query
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