Invention Application
- Patent Title: Silicon Carbide Device and a Method for Manufacturing a Silicon Carbide Device
- Patent Title (中): 碳化硅器件和制造碳化硅器件的方法
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Application No.: US14644607Application Date: 2015-03-11
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Publication No.: US20150187871A1Publication Date: 2015-07-02
- Inventor: Hans-Joachim Schulze , Christian Hecht , Roland Rupp , Rudolf Elpelt
- Applicant: Infineon Technologies AG
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L21/265 ; H01L29/16
Abstract:
A silicon carbide device includes an epitaxial silicon carbide layer including a first conductivity type and a buried lateral silicon carbide edge termination region located within the epitaxial silicon carbide layer including a second conductivity type. The buried lateral silicon carbide edge termination region is covered by a silicon carbide surface layer including the first conductivity type.
Public/Granted literature
- US09412808B2 Silicon carbide device and a method for manufacturing a silicon carbide device Public/Granted day:2016-08-09
Information query
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