公开(公告)号：US20230163167A1

公开(公告)日：2023-05-25

申请号：US17990142

申请日：2022-11-18

Applicant: Infineon Technologies AG

Inventor： Michael HELL ,  Thomas Aichinger ,  Rudolf Elpelt ,  Caspar Leendertz

IPC: H01L29/06 ,  H01L29/16 ,  H01L29/10 ,  H01L29/78 ,  H01L21/04 ,  H01L29/66

CPC classification number: H01L29/063 ,  H01L29/1608 ,  H01L29/1095 ,  H01L29/7813 ,  H01L21/0465 ,  H01L21/047 ,  H01L29/66068

Abstract: A semiconductor device is provided. In an example, the semiconductor device includes a trench gate structure in a silicon carbide (SiC) semiconductor body. The semiconductor device includes a source region of a first conductivity type that adjoins the trench gate structure in a first segment. The semiconductor device includes a semiconductor region of a second conductivity type. The semiconductor region includes a first sub-region arranged below the source region in the first segment, and a second sub-region arranged in a second segment that adjoins the first segment. The semiconductor device includes a current spread region of the first conductivity type. The current spread region includes a first sub-region that adjoins the trench gate structure in the first segment at a vertical distance to a first surface of the SiC semiconductor body, and a second sub-region that is spaced from the trench gate structure in the second segment at the vertical distance to the first surface by a lateral distance.

公开(公告)号：US20210343835A1

公开(公告)日：2021-11-04

申请号：US17375034

申请日：2021-07-14

Applicant: Infineon Technologies AG

Inventor： Ralf Siemieniec ,  Thomas Aichinger ,  Thomas Basler ,  Wolfgang Bergner ,  Rudolf Elpelt ,  Romain Esteve ,  Michael Hell ,  Daniel Kueck ,  Caspar Leendertz ,  Dethard Peters ,  Hans-Joachim Schulze

IPC: H01L29/06 ,  H01L29/78 ,  H01L29/16 ,  H01L21/04 ,  H01L29/66 ,  H01L29/10

Abstract: A semiconductor component includes: gate structures extending from a first surface into an SiC semiconductor body; a drift zone of a first conductivity type formed in the SiC semiconductor body; first mesas and second mesas arranged between the gate structures in the SiC semiconductor body; body areas of a second conductivity type arranged in the first mesas and the second mesas, the body areas each adjoining a first side wall of one of the gate structures; first shielding areas of the second conductivity type adjoining a second side wall of one of the gate structures; second shielding areas of the second conductivity type adjoining the body areas in the second mesas; and diode areas of the conductivity type of the drift zone, the diode areas forming Schottky contacts with a load electrode between the first shielding areas and the second shielding areas.

公开(公告)号：US11145755B2

公开(公告)日：2021-10-12

申请号：US16197151

申请日：2018-11-20

Applicant: Infineon Technologies AG

Inventor： Larissa Wehrhahn-Kilian ,  Rudolf Elpelt ,  Roland Rupp ,  Ralf Siemieniec ,  Bernd Zippelius

IPC: H01L29/78 ,  H01L29/10 ,  H01L29/16 ,  H01L29/08 ,  H01L29/417 ,  H01L29/06 ,  H01L29/861 ,  H01L29/739 ,  H01L21/04 ,  H01L29/66

Abstract: A semiconductor component includes a SiC semiconductor body having an active region and an edge termination structure at least partly surrounding the active region. A drift zone of a first conductivity type is formed in the SiC semiconductor body. The edge termination structure includes: a first doped region of a second conductivity type between a first surface of the SiC semiconductor body and the drift zone, the first doped region at least partly surrounding the active region and being spaced apart from the first surface; a plurality of second doped regions of the second conductivity type between the first surface and the first doped region; and third doped regions of the first conductivity type separating adjacent second doped regions of the plurality of second doped regions from one another in a lateral direction.

公开(公告)号：US20210091184A1

公开(公告)日：2021-03-25

申请号：US17031358

申请日：2020-09-24

Applicant: Infineon Technologies AG

Inventor： Michael Hell ,  Rudolf Elpelt ,  Thomas Ganner ,  Caspar Leendertz

IPC: H01L29/10 ,  H01L29/16 ,  H01L21/04 ,  H01L29/78 ,  H01L29/66

Abstract: A semiconductor device includes a silicon carbide semiconductor body. A first shielding region of a first conductivity type is connected to a first contact at a first surface of the silicon carbide semiconductor body. A current spread region of a second conductivity type is connected to a second contact at a second surface of the silicon carbide semiconductor body. A doping concentration profile of the current spread region includes peaks along a vertical direction perpendicular to the first surface. A doping concentration of one peak or one peak-group of the peaks is at least 50% higher than a doping concentration of any other peak of the current spread region. A vertical distance between the one peak or the one peak-group of the current spread region and the first surface is larger than a second vertical distance between the first surface and a maximum doping peak of the first shielding region.

公开(公告)号：US10957768B1

公开(公告)日：2021-03-23

申请号：US16595375

申请日：2019-10-07

Applicant: Infineon Technologies AG

Inventor： Michael Hell ,  Rudolf Elpelt ,  Caspar Leendertz ,  Dethard Peters

IPC: H01L29/66 ,  H01L29/167 ,  H01L29/78 ,  H01L29/16

Abstract: A SiC substrate of a semiconductor device includes: a drift region of a first conductivity type; a body region of a second conductivity type having a channel region which adjoins a first surface of the SiC substrate; a source region of the first conductivity type adjoining a first end of the channel region; an extension region of the first conductivity type at an opposite side of the body region as the source region and vertically extending to the drift region; a buried region of the second conductivity type below the body region and having a tail which extends toward the first surface and adjoins the extension region; and a compensation region of the first conductivity type protruding from the extension region into the body region along the first surface and terminating at a second end of the channel region opposite the first end.

公开(公告)号：US20180019304A1

公开(公告)日：2018-01-18

申请号：US15649870

申请日：2017-07-14

Applicant: Infineon Technologies AG

Inventor： Anton Mauder ,  Rudolf Elpelt ,  Dethard Peters

IPC: H01L29/06 ,  H01L29/16 ,  H01L29/423 ,  H01L29/78 ,  H01L29/66

CPC classification number: H01L29/0649 ,  H01L29/0619 ,  H01L29/0634 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/4238 ,  H01L29/66068 ,  H01L29/7802 ,  H01L29/7813

Abstract: An embodiment of a semiconductor device includes a body region of a first conductivity type in a SiC semiconductor body of a second conductivity type. A super junction structure is in the SiC semiconductor body, and includes a drift zone section being of the second conductivity type and a compensation structure of the first conductivity type. The compensation structure adjoins the body region and includes compensation sub-structures consecutively arranged along a vertical direction perpendicular to a surface of the SiC semiconductor body. The compensation sub-structures include a first compensation sub-structure and a second compensation sub-structure. A resistance of the second compensation sub-structure between opposite ends of the second compensation sub-structure along the vertical direction is at least five times larger than a resistance of the first compensation sub-structure between opposite ends of the first compensation sub-structure along the vertical direction.

公开(公告)号：US20160104779A1

公开(公告)日：2016-04-14

申请号：US14974553

申请日：2015-12-18

Applicant: Infineon Technologies AG

Inventor： Roland Rupp ,  Christian Hecht ,  Jens Konrath ,  Wolfgang Bergner ,  Hans-Joachim Schulze ,  Rudolf Elpelt

IPC: H01L29/16 ,  H01L21/04 ,  H01L29/06 ,  H01L21/56 ,  H01L23/31 ,  H01L23/29

CPC classification number: H01L29/1608 ,  H01L21/045 ,  H01L21/046 ,  H01L21/047 ,  H01L21/0495 ,  H01L21/565 ,  H01L23/291 ,  H01L23/293 ,  H01L23/3135 ,  H01L23/3171 ,  H01L29/0615 ,  H01L29/0619 ,  H01L29/0623 ,  H01L29/6606 ,  H01L29/66068 ,  H01L29/7811 ,  H01L29/872 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A silicon carbide device includes a silicon carbide substrate, an inorganic passivation layer structure and a molding material layer. The inorganic passivation layer structure laterally covers at least partly a main surface of the silicon carbide substrate and the molding material layer is arranged adjacent to the inorganic passivation layer structure.

Abstract translation: 碳化硅器件包括碳化硅衬底，无机钝化层结构和成型材料层。 无机钝化层结构至少部分地覆盖碳化硅衬底的主表面，并且模制材料层被布置成与无机钝化层结构相邻。

公开(公告)号：US20240096988A1

公开(公告)日：2024-03-21

申请号：US18139060

申请日：2023-04-25

Applicant: Infineon Technologies AG

Inventor： Michael Hell ,  Rudolf Elpelt

IPC: H01L29/423 ,  H01L21/04 ,  H01L29/08 ,  H01L29/16 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L29/4236 ,  H01L21/046 ,  H01L29/0865 ,  H01L29/1608 ,  H01L29/66803 ,  H01L29/7856 ,  H01L29/41791

Abstract: A semiconductor device includes a transistor. The transistor includes gate trenches formed in a semiconductor substrate, extending in a first horizontal direction and patterning the semiconductor substrate into ridges. The ridges are arranged between two adjacent gate trenches, respectively. The transistor further includes a gate electrode arranged in at least one of the gate trenches, a source region of a first conductivity type, a channel region, and a drift region of the first conductivity type. The source region, channel region and a part of the drift region are arranged in the ridges. The gate electrode is insulated from the channel region and the drift region. The channel region includes a doped portion of a second conductivity type. A doping concentration of the doped portion decreases in a second horizontal direction intersecting the first horizontal direction from a region close to the gate electrode to a central portion of the ridge.

公开(公告)号：US20240072122A1

公开(公告)日：2024-02-29

申请号：US18364519

申请日：2023-08-03

Applicant: Infineon Technologies AG

Inventor： Michael Hell ,  Rudolf Elpelt ,  Caspar Leendertz ,  Bernd Zippelius ,  Dethard Peters

IPC: H01L29/16 ,  H01L29/06 ,  H01L29/423 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L29/1608 ,  H01L29/0696 ,  H01L29/4236 ,  H01L29/66068 ,  H01L29/66734 ,  H01L29/7813

Abstract: A semiconductor device includes a transistor including transistor cells. Each transistor cells has a gate electrode arranged in gate trenches formed in a first portion of a silicon carbide substrate and extending in a first horizontal direction, a source region, a channel region, and a current-spreading region. The source region, channel region, and at least part of the current-spreading region are arranged in ridges patterned by the gate trenches. The transistor cells further include a body contact portion of the second conductivity type arranged in a second portion of the silicon carbide substrate and electrically connected to the channel region. The transistor cells further include a shielding region of the second conductivity type. A first portion of the shielding region is arranged below the gate trenches, respectively, and a second portion of the shielding region is arranged adjacent to a sidewall of the gate trenches, respectively.

公开(公告)号：US11735633B2

公开(公告)日：2023-08-22

申请号：US17080950

申请日：2020-10-27

Applicant: Infineon Technologies AG

Inventor： Ralf Siemieniec ,  Rudolf Elpelt ,  Anton Mauder

IPC: H01L29/16 ,  H01L29/04 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L29/1608 ,  H01L29/045 ,  H01L29/66068 ,  H01L29/7813

Abstract: A silicon carbide device includes a silicon carbide body having a hexagonal crystal lattice with a c-plane and with further main planes. The further main planes include a-planes and m-planes. A mean surface plane of the silicon carbide body is tilted to the c-plane by an off-axis angle. The silicon carbide body includes a columnar portion with column sidewalls. At least three of the column sidewalls are oriented along a respective one of the further main planes. A trench gate structure is in contact with the at least three of the column sidewalls.