A provided a power semiconductor device may include: a first semiconductor region of a first conductive type; a second semiconductor region of a second conductive type formed on the first semiconductor region; a plurality of trench gates formed to penetrate through the second semiconductor region and lengthily formed in one direction; and a third semiconductor region of the first conductive type formed on the second semiconductor region, formed at least partially in a length direction between the plurality of trench gates, and formed to contact one side of an adjacent trench gate in a width direction.