发明申请
- 专利标题： Structure and Method of Photomask with Reduction of Electron-Beam Scatterring
- 专利标题（中）： 具有还原电子束散射的光掩模的结构和方法
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申请号： US14179136申请日： 2014-02-12
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公开(公告)号： US20150227037A1公开(公告)日： 2015-08-13
- 发明人: Wen-Chang Hsueh , Chia-Jen Chen , Hsin-Chang Lee
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址： TW Hs
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hs
- 主分类号： G03F1/20
- IPC分类号： G03F1/20 ; H01L21/033
摘要：
The present disclosure provides a structure of a photomask. The photomask includes a substrate; and a conductive material layer dispose over the substrate and patterned to include a plurality of openings and a recess structure surrounding the plurality of openings.
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