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1.发明申请Structure and Method of Photomask with Reduction of Electron-Beam Scatterring 有权具有还原电子束散射的光掩模的结构和方法公开(公告)号：US20150227037A1
公开(公告)日：2015-08-13
申请号：US14179136
申请日：2014-02-12
发明人： Wen-Chang Hsueh , Chia-Jen Chen , Hsin-Chang Lee
IPC分类号： G03F1/20 , H01L21/033
摘要： The present disclosure provides a structure of a photomask. The photomask includes a substrate; and a conductive material layer dispose over the substrate and patterned to include a plurality of openings and a recess structure surrounding the plurality of openings.
摘要翻译： 本公开提供光掩模的结构。 光掩模包括基底; 并且导电材料层布置在衬底上并被图案化以包括多个开口和围绕多个开口的凹陷结构。
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公开(公告)号：US12019367B2
公开(公告)日：2024-06-25
申请号：US18084301
申请日：2022-12-19
发明人： Hsin-Chang Lee , Pei-Cheng Hsu , Ta-Cheng Lien , Wen-Chang Hsueh
摘要： A reflective mask blank includes a substrate, a reflective multilayer (RML) disposed on the substrate, a capping layer disposed on the reflective multilayer, and an absorber layer disposed on the capping layer. The absorber layer has length or width dimensions smaller than the capping layer, and part of the capping layer is exposed by the absorber layer. The dimension of the absorber layer and the hard mask layer ranges between 146 cm to 148 cm. The dimensions of the substrate, the RML, and the capping layer range between 150 cm to 152 cm.
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公开(公告)号：US11740547B2
公开(公告)日：2023-08-29
申请号：US17244662
申请日：2021-04-29
发明人： Wen-Chang Hsueh , Huan-Ling Lee , Chia-Jen Chen , Hsin-Chang Lee
摘要： A method for manufacturing a reticle is provided. The method includes forming a first reflective multilayer over a mask substrate. The method also includes forming a capping layer over the first reflective ML. The method further includes depositing a first absorption layer over the capping layer. In addition, the method includes depositing an etch stop layer over the first absorption layer. The method also includes forming a second reflective multilayer (ML) over the etch stop layer. The method further includes forming a second absorption layer over the second reflective ML. In addition, the method includes forming an opening through the second absorption layer and the second reflective ML until the etch stop layer is exposed. The method also includes etching the etch stop layer and the first absorption layer through the opening until the capping layer is exposed.
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公开(公告)号：US12130548B2
公开(公告)日：2024-10-29
申请号：US18343493
申请日：2023-06-28
发明人： Wen-Chang Hsueh , Huan-Ling Lee , Chia-Jen Chen , Hsin-Chang Lee
摘要： A reticle is provided. The reticle includes a first reflective multilayer (ML) over a mask substrate and a capping layer over the first reflective ML. The reticle also includes a first absorption layer over the capping layer and a second reflective multilayer (ML) over the first absorption layer. The reticle further includes an etch stop layer over the second reflective ML and a third reflective multilayer (ML) over the etch stop layer. In addition, the reticle includes an absorption film pair over the third reflective ML.
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5.发明授权Structure and method of photomask with reduction of electron-beam scatterring 有权具有减少电子束散射的光掩模的结构和方法公开(公告)号：US09429835B2
公开(公告)日：2016-08-30
申请号：US14179136
申请日：2014-02-12
发明人： Wen-Chang Hsueh , Chia-Jen Chen , Hsin-Chang Lee
摘要： The present disclosure provides a structure of a photomask. The photomask includes a substrate; and a conductive material layer dispose over the substrate and patterned to include a plurality of openings and a recess structure surrounding the plurality of openings.
摘要翻译： 本公开提供光掩模的结构。 光掩模包括基底; 并且导电材料层布置在衬底上并被图案化以包括多个开口和围绕多个开口的凹陷结构。
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