Invention Application
US20150236248A1 TOP ELECTRODE ETCH IN A MAGNETORESISTIVE DEVICE AND DEVICES MANUFACTURED USING SAME
审中-公开
磁电器件中的顶电极蚀刻和使用其制造的器件
- Patent Title: TOP ELECTRODE ETCH IN A MAGNETORESISTIVE DEVICE AND DEVICES MANUFACTURED USING SAME
- Patent Title (中): 磁电器件中的顶电极蚀刻和使用其制造的器件
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Application No.: US14296181Application Date: 2014-06-04
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Publication No.: US20150236248A1Publication Date: 2015-08-20
- Inventor: Sarin A. Deshpande , Sanjeev Aggarwal , Kerry Joseph Nagel , Nicholas Rizzo , Jason Allen Janesky
- Applicant: Everspin Technologies, Inc.
- Main IPC: H01L43/12
- IPC: H01L43/12
Abstract:
A two-step etching process is used to form the top electrode for a magnetoresistive device. The level of isotropy is different for each of the two etching steps, thereby providing advantages associated with isotropic etching as well as more anisotropic etching. The level of isotropy is controlled by varying power and pressure during plasma etching operations.
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