发明申请
- 专利标题： METHODS OF FORMING LOW RESISTANCE CONTACTS
- 专利标题（中）： 形成低电阻接触的方法
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申请号： US14190226申请日： 2014-02-26
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公开(公告)号： US20150243565A1公开(公告)日： 2015-08-27
- 发明人: CHUN-WEN NIEH , HUNG-CHANG HSU , WEI-JUNG LIN , YAN-MING TSAI , CHEN-MING LEE , MEI-YUN WANG
- 申请人： Taiwan Semiconductor Manufacturing Company Limited
- 申请人地址： TW Hsinchu
- 专利权人： Taiwan Semiconductor Manufacturing Company Limited
- 当前专利权人： Taiwan Semiconductor Manufacturing Company Limited
- 当前专利权人地址： TW Hsinchu
- 主分类号： H01L21/8238
- IPC分类号： H01L21/8238 ; H01L27/092 ; H01L29/45 ; H01L21/283
摘要：
Methods for forming electrical contacts are provided. First and second FETs are formed over a semiconductor substrate. Openings are etched in a dielectric layer formed over the substrate, where the openings extend to source and drain regions of the FETs. A hard mask is formed over the source and drain regions of FETs. A first portion of the hard mask is removed, where the first portion is formed over the source and drain regions of the first FET. First silicide layers are formed over the source and drain regions of the first FET. A second portion of the hard mask is removed, where the second portion is formed over the source and drain regions of the second FET. Second silicide layers are formed over the source and drain regions of the second FET. A metal layer is deposited within the openings to fill the openings.
公开/授权文献
- US09165838B2 Methods of forming low resistance contacts 公开/授权日：2015-10-20
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