发明申请
- 专利标题： SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME
- 专利标题（中）： 半导体器件及其制造方法
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申请号： US14408628申请日： 2013-06-11
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公开(公告)号： US20150243790A1公开(公告)日： 2015-08-27
- 发明人: Seiichi Uchida , Tadayoshi Miyamoto , Yasuyuki Ogawa , Yutaka Takamaru , Kazuatsu Ito , Takuya Matsuo , Shigeyasu Mori
- 申请人： Sharp Kabushiki Kaisha
- 申请人地址： JP Osaka-shi, Osaka
- 专利权人： Sharp Kabushiki Kaisha
- 当前专利权人： Sharp Kabushiki Kaisha
- 当前专利权人地址： JP Osaka-shi, Osaka
- 优先权： JP2012-137699 20120619
- 国际申请： PCT/JP2013/066056 WO 20130611
- 主分类号： H01L29/786
- IPC分类号： H01L29/786 ; H01L29/66 ; H01L21/441 ; H01L21/02 ; H01L21/425 ; H01L29/24 ; H01L29/45
摘要：
This TFT substrate (100A) includes: a gate connecting layer (3a) formed on a substrate (1) out of a same conductive film as a gate electrode (3) or a transparent connecting layer (2a) formed on the substrate (1) out of a same conductive film as a first transparent electrode (2); an oxide layer (5z) which is formed on an insulating layer (4) and which includes at least one conductor region (5a); and a source connecting layer (6a) formed on the oxide layer (5z) out of a same conductor film as a source electrode (6s). The source connecting layer (6a) is electrically connected to either the gate connecting layer (3a) or the transparent connecting layer (2a) via the at least one conductor region (5a).
公开/授权文献
- US09276127B2 Semiconductor device and method for producing same 公开/授权日：2016-03-01
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