发明申请
- 专利标题： METHOD OF CLEANING PLASMA PROCESSING APPARATUS
- 专利标题（中）： 清洗等离子体加工装置的方法
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申请号： US14635978申请日： 2015-03-02
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公开(公告)号： US20150247235A1公开(公告)日： 2015-09-03
- 发明人: Hiroki KISHI , Mitsuru HASHIMOTO , Keiichi SHIMODA , Eiichi NISHIMURA , Akitaka SHIMIZU
- 申请人： TOKYO ELECTRON LIMITED
- 申请人地址： JP Tokyo
- 专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人地址： JP Tokyo
- 优先权： JP2014-040524 20140303
- 主分类号： C23C14/30
- IPC分类号： C23C14/30 ; H01J37/305
摘要：
There is provided a cleaning method for removing a first deposit, formed on an upper electrode through an etching of a metal layer containing a metal, by using a plasma generated between a lower electrode of a lower structure and the upper electrode in a processing chamber of a plasma processing apparatus. The method includes a step of colliding ions with the first deposit formed on the upper electrode and a step of removing a second deposit, which is generated by said colliding and formed on the lower structure. Further, a cycle including the step of colliding and the step of removing is repeated multiple times.
公开/授权文献
- US10053773B2 Method of cleaning plasma processing apparatus 公开/授权日：2018-08-21
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