公开(公告)号：US20170066103A1

公开(公告)日：2017-03-09

申请号：US15248118

申请日：2016-08-26

Applicant: Tokyo Electron Limited

Inventor： Taketoshi TOMIOKA ,  Yasuharu SASAKI ,  Hiroki KISHI ,  Jisoo SUH

IPC: B24B37/32 ,  B24B37/20

CPC classification number: B24B37/32 ,  B24B37/20

Abstract: A focus ring is disposed on a peripheral portion of a lower electrode that receives a substrate thereon in a process container so as to contact a member of the lower electrode. The focus ring includes a contact surface that contacts the member of the lower electrode and is made of any one of a silicon-containing material, alumina and quartz. At least one of the contact surface of the focus ring and a contact surface of the member of the lower electrode has surface roughness of 0.1 micrometers or more.

Abstract translation: 聚焦环设置在下电极的周边部分上，该下电极在处理容器中接收基板，以便与下电极的部件接触。 聚焦环包括与下电极的构件接触并由含硅材料，氧化铝和石英中的任一种制成的接触表面。 聚焦环的接触表面和下电极的构件的接触表面中的至少一个具有0.1微米或更大的表面粗糙度。

公开(公告)号：US20210005495A1

公开(公告)日：2021-01-07

申请号：US17028135

申请日：2020-09-22

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yasuharu SASAKI ,  Taketoshi TOMIOKA ,  Hiroki KISHI ,  Jisoo SUH

IPC: H01L21/683 ,  H02N13/00 ,  H01L21/67

Abstract: An electrostatic chucking method uses a substrate processing apparatus including an electrostatic chuck, a focus ring, a supply unit configured to supply a heat transfer medium to a space formed between the focus ring and the electrostatic chuck, and a plurality of electrodes provided at a region in the electrostatic chuck which corresponds to the focus ring. The electrostatic chucking method includes supplying by the supply unit the heat transfer medium to the space for a plasma processing period for which a plasma for processing the substrate is generated, and applying different voltages to the plurality of electrodes to attract and hold the focus ring on the electrostatic chuck for a period other than the plasma processing period.

公开(公告)号：US20190221464A1

公开(公告)日：2019-07-18

申请号：US16361616

申请日：2019-03-22

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yasuharu SASAKI ,  Taketoshi TOMIOKA ,  Hiroki KISHI ,  Jisoo SUH

IPC: H01L21/683 ,  H02N13/00 ,  H01L21/67

CPC classification number: H01L21/6833 ,  H01L21/67109 ,  H02N13/00

Abstract: An electrostatic chucking method uses a substrate processing apparatus including an electrostatic chuck, a focus ring, a supply unit configured to supply a heat transfer medium to a space formed between the focus ring and the electrostatic chuck, and a plurality of electrodes provided at a region in the electrostatic chuck which corresponds to the focus ring. The electrostatic chucking method includes supplying by the supply unit the heat transfer medium to the space for a plasma processing period for which a plasma for processing the substrate is generated, and applying different voltages to the plurality of electrodes to attract and hold the focus ring on the electrostatic chuck for a period other than the plasma processing period.

公开(公告)号：US20150162170A1

公开(公告)日：2015-06-11

申请号：US14564371

申请日：2014-12-09

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hiroki KISHI ,  Masaaki MIYAGAWA ,  Toshinori KITABATA ,  Manabu IWATA

IPC: H01J37/32

CPC classification number: H01J37/32642 ,  H01J37/32715

Abstract: A degree of tilting caused by consumption of a focus ring can be suppressed. A plasma processing apparatus includes a chamber configured to perform a plasma process on a target object; a mounting table which is provided within the chamber and has a mounting surface on which the target object is mounted; and the focus ring, provided on the mounting table to surround the target object mounted on the mounting surface, having a first flat portion lower than the mounting surface, a second flat portion higher than the first flat portion and not higher than a target surface of the target object, and a third flat portion higher than the second flat portion and the target surface of the target object in sequence from an inner peripheral side thereof to an outer peripheral side thereof.

Abstract translation: 可以抑制由焦点环的消耗引起的倾斜度。 等离子体处理装置包括：室，被配置为对目标物体执行等离子体处理; 安装台，其设置在所述室内并且具有安装所述目标物体的安装面; 以及设置在所述安装台上的聚焦环，以围绕安装在所述安装面上的所述目标物体，具有比所述安装面低的第一平坦部，比所述第一平坦部高的第二平坦部， 目标物体和比目标物体的第二平坦部分和目标物体的目标表面高的第三平坦部分，从其内周侧到外周侧。

公开(公告)号：US20210316416A1

公开(公告)日：2021-10-14

申请号：US17358100

申请日：2021-06-25

Applicant: Tokyo Electron Limited

Inventor： Taketoshi TOMIOKA ,  Yasuharu SASAKI ,  Hiroki KISHI ,  Jisoo SUH

IPC: B24B37/32 ,  B24B37/20

Abstract: A focus ring is disposed on a peripheral portion of a lower electrode that receives a substrate thereon in a process container so as to contact a member of the lower electrode. The focus ring includes a contact surface that contacts the member of the lower electrode and is made of any one of a silicon-containing material, alumina and quartz. At least one of the contact surface of the focus ring and a contact surface of the member of the lower electrode has surface roughness of 0.1 micrometers or more.

公开(公告)号：US20170178872A1

公开(公告)日：2017-06-22

申请号：US15378522

申请日：2016-12-14

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hiroki KISHI ,  Jisoo SUH

IPC: H01J37/32

CPC classification number: H01J37/32798 ,  H01J37/32091 ,  H01J37/32137 ,  H01J37/32165 ,  H01J37/32568 ,  H01J37/32697 ,  H01J37/32715 ,  H01J37/32926 ,  H01J2237/334 ,  H01J2237/3343 ,  H01L21/3065 ,  H01L22/12

Abstract: A plasma processing apparatus 1 includes a chamber 10, a mounting table 16, a focus ring 24a, a first electrode plate 36 and a second electrode plate 35. The focus ring 24a is provided around the mounting table 16 to surround a mounting surface of the mounting table 16. The first electrode plate 36 is provided above the mounting table 16. The second electrode plate 35 is provided around the first electrode plate 36 to surround the first electrode plate 36 and is insulated from the first electrode plate 36. The plasma processing apparatus 1, in a first process, performs a preset processing on a semiconductor wafer W mounted on the mounting surface with plasma generated within the chamber, and, in a second process, increases an absolute value of a negative DC voltage applied to the second electrode plate 35 depending on an elapsed time of the first process.

公开(公告)号：US20150247235A1

公开(公告)日：2015-09-03

申请号：US14635978

申请日：2015-03-02

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hiroki KISHI ,  Mitsuru HASHIMOTO ,  Keiichi SHIMODA ,  Eiichi NISHIMURA ,  Akitaka SHIMIZU

IPC: C23C14/30 ,  H01J37/305

CPC classification number: C23C16/4405 ,  C23C16/4401 ,  H01J37/3053 ,  H01J37/32091 ,  H01J37/32862 ,  H01J2237/022

Abstract: There is provided a cleaning method for removing a first deposit, formed on an upper electrode through an etching of a metal layer containing a metal, by using a plasma generated between a lower electrode of a lower structure and the upper electrode in a processing chamber of a plasma processing apparatus. The method includes a step of colliding ions with the first deposit formed on the upper electrode and a step of removing a second deposit, which is generated by said colliding and formed on the lower structure. Further, a cycle including the step of colliding and the step of removing is repeated multiple times.

Abstract translation: 提供了一种清洁方法，用于通过使用在下部结构的下部电极和上部电极之间产生的等离子体，通过蚀刻包含金属的金属层来去除在上部电极上形成的第一沉积物，处理室中的等离子体 等离子体处理装置。 该方法包括使离子与上部电极上形成的第一沉积物碰撞的步骤，以及通过所述碰撞产生并形成在下部结构上产生的第二沉积物的步骤。 此外，重复多次包括冲突步骤和去除步骤的循环。

公开(公告)号：US20180327901A1

公开(公告)日：2018-11-15

申请号：US16043375

申请日：2018-07-24

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hiroki KISHI ,  Mitsuru HASHIMOTO ,  Keiichi SHIMODA ,  Eiichi NISHIMURA ,  Akitaka SHIMIZU

IPC: C23C16/44 ,  H01J37/305 ,  H01J37/32

CPC classification number: C23C16/4405 ,  C23C16/4401 ,  H01J37/3053 ,  H01J37/32091 ,  H01J37/32862 ,  H01J2237/022

Abstract: There is provided a cleaning method for removing a first deposit, formed on an upper electrode through an etching of a metal layer containing a metal, by using a plasma generated between a lower electrode of a lower structure and the upper electrode in a processing chamber of a plasma processing apparatus. The method includes a step of colliding ions with the first deposit formed on the upper electrode and a step of removing a second deposit, which is generated by said colliding and formed on the lower structure. Further, a cycle including the step of colliding and the step of removing is repeated multiple times.

公开(公告)号：US20160189994A1

公开(公告)日：2016-06-30

申请号：US14975377

申请日：2015-12-18

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yasuharu SASAKI ,  Taketoshi TOMIOKA ,  Hiroki KISHI ,  Jisoo SUH

IPC: H01L21/683 ,  H02N13/00

CPC classification number: H01L21/6833 ,  H01L21/67109 ,  H02N13/00

Abstract: An electrostatic chucking method uses a substrate processing apparatus including an electrostatic chuck, a focus ring, a supply unit configured to supply a heat transfer medium to a space formed between the focus ring and the electrostatic chuck, and a plurality of electrodes provided at a region in the electrostatic chuck which corresponds to the focus ring. The electrostatic chucking method includes supplying by the supply unit the heat transfer medium to the space for a plasma processing period for which a plasma for processing the substrate is generated, and applying different voltages to the plurality of electrodes to attract and hold the focus ring on the electrostatic chuck for a period other than the plasma processing period.

Abstract translation: 静电吸附方法使用包括静电卡盘，聚焦环，供给单元的基板处理装置，该供给单元构造成将热传导介质供给到形成在聚焦环和静电卡盘之间的空间，以及多个电极， 在对应于聚焦环的静电卡盘中。 静电吸附方法包括：通过供给单元将传热介质供给到等离子体处理时间的空间，等离子体处理期间产生用于处理基板的等离子体，并且向多个电极施加不同的电压以吸引并保持聚焦环 静电卡盘等离子体处理期间以外的期间。