发明申请
US20150247257A1 GALLIUM NITRIDE CRYSTAL, GROUP 13 NITRIDE CRYSTAL, GROUP 13 NITRIDE CRYSTAL SUBSTRATE, AND MANUFACTURING METHOD
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氮化钠晶体，13号硝酸盐晶体，13号硝酸盐晶体基板和制造方法
- 专利标题： GALLIUM NITRIDE CRYSTAL, GROUP 13 NITRIDE CRYSTAL, GROUP 13 NITRIDE CRYSTAL SUBSTRATE, AND MANUFACTURING METHOD
- 专利标题（中）： 氮化钠晶体，13号硝酸盐晶体，13号硝酸盐晶体基板和制造方法
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申请号： US14708583申请日： 2015-05-11
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公开(公告)号： US20150247257A1公开(公告)日： 2015-09-03
- 发明人: Masahiro Hayashi , Seiji Sarayama , Takashi Satoh , Hiroshi Nambu , Chiharu Kimura , Naoya Miyoshi
- 申请人： Masahiro Hayashi , Seiji Sarayama , Takashi Satoh , Hiroshi Nambu , Chiharu Kimura , Naoya Miyoshi
- 申请人地址： JP Tokyo
- 专利权人： RICOH COMPANY, LTD.
- 当前专利权人： RICOH COMPANY, LTD.
- 当前专利权人地址： JP Tokyo
- 优先权： JP2011201207 20110914
- 主分类号： C30B9/12
- IPC分类号： C30B9/12 ; C30B29/40
摘要：
A gallium nitride crystal having a hexagonal crystal structure includes a first region located on an inner side of a cross section intersecting c-axis of the hexagonal crystal structure, and a second region surrounding at least a part of the outer periphery of the first region in the cross section. An emission spectrum of each of the first region and the second region with electron beam or ultraviolet light excitation has a first peak including a band edge emission of gallium nitride and a second peak located in a longer wavelength area than the first peak. A peak intensity of the first peak is smaller than a peak intensity of the second peak in the first region, and a peak intensity of the first peak is greater than a peak intensity of the second peak in the second region.
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