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    Manufacturing method of group 13 nitride crystal
    1.
    发明授权
    Manufacturing method of group 13 nitride crystal 有权
    13族氮化物晶体的制造方法

    公开(公告)号：US09404196B2

    公开(公告)日：2016-08-02

    申请号：US13592555

    申请日：2012-08-23

    申请人： Masahiro Hayashi ,  Seiji Sarayama ,  Takashi Satoh ,  Hiroshi Nambu ,  Chiharu Kimura ,  Naoya Miyoshi

    发明人： Masahiro Hayashi ,  Seiji Sarayama ,  Takashi Satoh ,  Hiroshi Nambu ,  Chiharu Kimura ,  Naoya Miyoshi

    IPC分类号： C30B9/10 ,  C30B9/12 ,  C30B29/40

    CPC分类号： C30B9/12 ,  C30B9/10 ,  C30B29/406

    摘要： A method of manufacturing a group 13 nitride crystal includes a crystal growth process to form the group 13 nitride crystal by growing the group 13 nitride crystal having a hexagonal crystal structure from a seed crystal which is a gallium nitride crystal having a hexagonal crystal structure in which a length “L” in a c-axis direction is 9.7 mm or more, and a ratio L/d of the length “L” to a crystal diameter “d” in a c-plane is larger than 0.813. The crystal growth process includes a process of forming an outer periphery containing a {10-10} plane and an outer periphery containing a {10-11} plane at side surfaces of the group 13 nitride crystal, and forming an outer periphery containing a {0001} plane at a bottom surface of the group 13 nitride crystal.

    摘要翻译： 制造13族氮化物晶体的方法包括通过从具有六方晶系结构的氮化镓晶体的晶种生长具有六方晶系结构的13族氮化物晶体来形成氮化镓族晶体的晶体生长工艺，其中 c轴方向的长度“L”为9.7mm以上，c面中的长度“L”与晶体直径“d”的比率L / d大于0.813。 晶体生长工艺包括在第13族氮化物晶体的侧面形成包含{10-10}面和包含{10-11}面的外周的外周的工艺，并且形成含有{ 0001}面。

    GALLIUM NITRIDE CRYSTAL, GROUP 13 NITRIDE CRYSTAL, GROUP 13 NITRIDE CRYSTAL SUBSTRATE, AND MANUFACTURING METHOD
    7.
    发明申请
    GALLIUM NITRIDE CRYSTAL, GROUP 13 NITRIDE CRYSTAL, GROUP 13 NITRIDE CRYSTAL SUBSTRATE, AND MANUFACTURING METHOD 有权
    氮化钠晶体，13号硝酸盐晶体，13号硝酸盐晶体基板和制造方法

    公开(公告)号：US20150247257A1

    公开(公告)日：2015-09-03

    申请号：US14708583

    申请日：2015-05-11

    申请人： Masahiro Hayashi ,  Seiji Sarayama ,  Takashi Satoh ,  Hiroshi Nambu ,  Chiharu Kimura ,  Naoya Miyoshi

    发明人： Masahiro Hayashi ,  Seiji Sarayama ,  Takashi Satoh ,  Hiroshi Nambu ,  Chiharu Kimura ,  Naoya Miyoshi

    IPC分类号： C30B9/12 ,  C30B29/40

    CPC分类号： C30B9/12 ,  C30B29/406 ,  Y10T428/239 ,  Y10T428/26

    摘要： A gallium nitride crystal having a hexagonal crystal structure includes a first region located on an inner side of a cross section intersecting c-axis of the hexagonal crystal structure, and a second region surrounding at least a part of the outer periphery of the first region in the cross section. An emission spectrum of each of the first region and the second region with electron beam or ultraviolet light excitation has a first peak including a band edge emission of gallium nitride and a second peak located in a longer wavelength area than the first peak. A peak intensity of the first peak is smaller than a peak intensity of the second peak in the first region, and a peak intensity of the first peak is greater than a peak intensity of the second peak in the second region.

    摘要翻译： 具有六方晶系结构的氮化镓晶体包括位于与六方晶体结构的c轴交叉的截面的内侧的第一区域，以及包围第一区域的外周的至少一部分的第二区域 横截面。 具有电子束或紫外光激发的第一区域和第二区域中的每一个的发射光谱具有包括氮化镓的带边发射和位于比第一峰的更长波长区域的第二峰的第一峰。 第一峰的峰值强度小于第一区域中的第二峰值的峰值强度，并且第一峰值的峰值强度大于第二区域中的第二峰值的峰值强度。