公开(公告)号：US09404196B2

公开(公告)日：2016-08-02

申请号：US13592555

申请日：2012-08-23

申请人： Masahiro Hayashi ,  Seiji Sarayama ,  Takashi Satoh ,  Hiroshi Nambu ,  Chiharu Kimura ,  Naoya Miyoshi

发明人： Masahiro Hayashi ,  Seiji Sarayama ,  Takashi Satoh ,  Hiroshi Nambu ,  Chiharu Kimura ,  Naoya Miyoshi

IPC分类号： C30B9/10 ,  C30B9/12 ,  C30B29/40

CPC分类号： C30B9/12 ,  C30B9/10 ,  C30B29/406

摘要： A method of manufacturing a group 13 nitride crystal includes a crystal growth process to form the group 13 nitride crystal by growing the group 13 nitride crystal having a hexagonal crystal structure from a seed crystal which is a gallium nitride crystal having a hexagonal crystal structure in which a length “L” in a c-axis direction is 9.7 mm or more, and a ratio L/d of the length “L” to a crystal diameter “d” in a c-plane is larger than 0.813. The crystal growth process includes a process of forming an outer periphery containing a {10-10} plane and an outer periphery containing a {10-11} plane at side surfaces of the group 13 nitride crystal, and forming an outer periphery containing a {0001} plane at a bottom surface of the group 13 nitride crystal.

摘要翻译： 制造13族氮化物晶体的方法包括通过从具有六方晶系结构的氮化镓晶体的晶种生长具有六方晶系结构的13族氮化物晶体来形成氮化镓族晶体的晶体生长工艺，其中 c轴方向的长度“L”为9.7mm以上，c面中的长度“L”与晶体直径“d”的比率L / d大于0.813。 晶体生长工艺包括在第13族氮化物晶体的侧面形成包含{10-10}面和包含{10-11}面的外周的外周的工艺，并且形成含有{ 0001}面。

公开(公告)号：US20130065036A1

公开(公告)日：2013-03-14

申请号：US13603703

申请日：2012-09-05

申请人： Masahiro HAYASHI ,  Seiji Sarayama ,  Takashi Satoh ,  Hiroshi Nambu ,  Chiharu Kimura ,  Naoya Miyoshi

发明人： Masahiro HAYASHI ,  Seiji Sarayama ,  Takashi Satoh ,  Hiroshi Nambu ,  Chiharu Kimura ,  Naoya Miyoshi

IPC分类号： C01B21/06 ,  C30B19/02 ,  C30B29/40

CPC分类号： C30B29/406 ,  C30B9/12 ,  H01L33/16 ,  H01L33/32

摘要： A gallium nitride crystal having a hexagonal crystal structure, wherein a full width at half maximum (FWHM) of X-ray rocking curve in a region at a side of one edge in a c-axis direction is smaller than the FWHM in a region at a side of the other edge in the c-axis direction, in at least one of m-plane outer peripheral surfaces of the hexagonal crystal structure.

摘要翻译： 具有六方晶系结构的氮化镓晶体，其中在c轴方向上的一个边缘的一侧的区域中的X射线摇摆曲线的半高全宽（FWHM）小于FW轴的区域中的FWHM 在六边形晶体结构的m面外周面的至少一个中，在c轴方向上的另一边的一侧。

公开(公告)号：US20130061799A1

公开(公告)日：2013-03-14

申请号：US13592555

申请日：2012-08-23

申请人： Masahiro HAYASHI ,  Seiji SARAYAMA ,  Takashi SATOH ,  Hiroshi NAMBU ,  Chiharu KIMURA ,  Naoya MIYOSHI

发明人： Masahiro HAYASHI ,  Seiji SARAYAMA ,  Takashi SATOH ,  Hiroshi NAMBU ,  Chiharu KIMURA ,  Naoya MIYOSHI

IPC分类号： C30B19/02

CPC分类号： C30B9/12 ,  C30B9/10 ,  C30B29/406

摘要： A method of manufacturing a group 13 nitride crystal includes a crystal growth process to form the group 13 nitride crystal by growing the group 13 nitride crystal having a hexagonal crystal structure from a seed crystal which is a gallium nitride crystal having a hexagonal crystal structure in which a length “L” in a c-axis direction is 9.7 mm or more, and a ratio L/d of the length “L” to a crystal diameter “d” in a c-plane is larger than 0.813. The crystal growth process includes a process of forming an outer periphery containing a {10-10} plane and an outer periphery containing a {10-11} plane at side surfaces of the group 13 nitride crystal, and forming an outer periphery containing a {0001} plane at a bottom surface of the group 13 nitride crystal.

摘要翻译： 制造13族氮化物晶体的方法包括通过从具有六方晶系结构的氮化镓晶体的晶种生长具有六方晶系结构的13族氮化物晶体来形成氮化镓族晶体的晶体生长工艺，其中 c轴方向的长度L为9.7mm以上，c面的长度L与晶体直径d的比L / d大于0.813。 晶体生长工艺包括在第13族氮化物晶体的侧面形成包含{10-10}面和包含{10-11}面的外周的外周的工艺，并且形成含有{ 0001}面。

公开(公告)号：US09732435B2

公开(公告)日：2017-08-15

申请号：US13609077

申请日：2012-09-10

申请人： Masahiro Hayashi ,  Seiji Sarayama ,  Takashi Satoh ,  Hiroshi Nambu ,  Chiharu Kimura ,  Naoya Miyoshi

发明人： Masahiro Hayashi ,  Seiji Sarayama ,  Takashi Satoh ,  Hiroshi Nambu ,  Chiharu Kimura ,  Naoya Miyoshi

IPC分类号： C30B29/40 ,  C30B7/10 ,  C30B9/00 ,  C30B29/60

CPC分类号： C30B7/105 ,  C30B9/00 ,  C30B29/403 ,  C30B29/406 ,  C30B29/607

摘要： A group 13 nitride crystal having a hexagonal crystal structure and containing at least a nitrogen atom and at least a metal atom selected from a group consisting of B, Al, Ga, In, and Tl. The group 13 nitride crystal includes a first region disposed on an inner side in a cross section intersecting c-axis, a third region disposed on an outermost side in the cross section and having a crystal property different from that of the first region, and a second region disposed at least partially between the first region and the third region in the cross section, the second region being a transition region of a crystal growth and having a crystal property different from that of the first region and that of the third region.

公开(公告)号：US09123863B2

公开(公告)日：2015-09-01

申请号：US13603678

申请日：2012-09-05

申请人： Masahiro Hayashi ,  Seiji Sarayama ,  Takashi Satoh ,  Hiroshi Nambu ,  Chiharu Kimura ,  Naoya Miyoshi

发明人： Masahiro Hayashi ,  Seiji Sarayama ,  Takashi Satoh ,  Hiroshi Nambu ,  Chiharu Kimura ,  Naoya Miyoshi

IPC分类号： H01L33/32 ,  H01L29/04 ,  H01L33/00 ,  H01L29/20 ,  H01L33/38 ,  H01L33/18 ,  H01L33/24

CPC分类号： H01L33/32 ,  H01L29/045 ,  H01L29/2003 ,  H01L33/0025 ,  H01L33/18 ,  H01L33/24

摘要： A group 13 nitride crystal has a hexagonal crystal structure and at least contains nitrogen atom and at least a kind of metal atoms selected from a group consisting of B, Al, Ga, In, and Tl. The group 13 nitride crystal includes a first region located at an inner side of a cross section intersecting a c-axis, and a second region surrounding at least a part of an outer periphery of the first region, having a thickness larger than a maximum diameter of the first region, and having a carrier density higher than that of the first region.

摘要翻译： 13族氮化物晶体具有六方晶系结构，并且至少含有氮原子和至少一种选自B，Al，Ga，In和Tl的金属原子。 13族氮化物晶体包括位于与c轴交叉的横截面的内侧的第一区域和围绕第一区域的外周的至少一部分的第二区域，该第二区域的厚度大于最大直径 并且具有比第一区域的载流子密度高的载流子密度。

公开(公告)号：US20130065010A1

公开(公告)日：2013-03-14

申请号：US13612352

申请日：2012-09-12

申请人： Masahiro Hayashi ,  Seiji Sarayama ,  Takashi Satoh ,  Hiroshi Nambu ,  Chiharu Kimura ,  Naoya Miyoshi

发明人： Masahiro Hayashi ,  Seiji Sarayama ,  Takashi Satoh ,  Hiroshi Nambu ,  Chiharu Kimura ,  Naoya Miyoshi

IPC分类号： C30B9/12 ,  C09K11/63 ,  C01B21/06 ,  B32B9/04 ,  B32B3/02

CPC分类号： C30B9/12 ,  C30B29/406 ,  Y10T428/239 ,  Y10T428/26

摘要： A gallium nitride crystal having a hexagonal crystal structure includes a first region located on an inner side of a cross section intersecting c-axis of the hexagonal crystal structure, and a second region surrounding at least a part of the outer periphery of the first region in the cross section. An emission spectrum of each of the first region and the second region with electron beam or ultraviolet light excitation has a first peak including a band edge emission of gallium nitride and a second peak located in a longer wavelength area than the first peak. A peak intensity of the first peak is smaller than a peak intensity of the second peak in the first region, and a peak intensity of the first peak is greater than a peak intensity of the second peak in the second region.

公开(公告)号：US20130064749A1

公开(公告)日：2013-03-14

申请号：US13609077

申请日：2012-09-10

申请人： Masahiro HAYASHI ,  Seiji SARAYAMA ,  Takashi SATOH ,  Hiroshi NAMBU ,  Chiharu KIMURA ,  Naoya MIYOSHI

发明人： Masahiro HAYASHI ,  Seiji SARAYAMA ,  Takashi SATOH ,  Hiroshi NAMBU ,  Chiharu KIMURA ,  Naoya MIYOSHI

IPC分类号： C01B21/06 ,  C01B21/072 ,  C01B21/064

CPC分类号： C30B7/105 ,  C30B9/00 ,  C30B29/403 ,  C30B29/406 ,  C30B29/607

摘要： A group 13 nitride crystal having a hexagonal crystal structure and containing at least a nitrogen atom and at least a metal atom selected from a group consisting of B, Al, Ga, In, and Tl. The group 13 nitride crystal includes a first region disposed on an inner side in a cross section intersecting c-axis, a third region disposed on an outermost side in the cross section and having a crystal property different from that of the first region, and a second region disposed at least partially between the first region and the third region in the cross section, the second region being a transition region of a crystal growth and having a crystal property different from that of the first region and that of the third region.

摘要翻译： 具有六方晶系结构并且至少包含氮原子和至少一个选自B，Al，Ga，In和Tl的金属原子的13族氮化物晶体。 13族氮化物晶体包括设置在与c轴交叉的横截面的内侧的第一区域，设置在截面最外侧的第三区域，并且具有与第一区域不同的晶体特性， 所述第二区域至少部分地设置在所述第一区域和所述第三区域之间，所述第二区域是晶体生长的过渡区域，并且具有与所述第一区域和所述第三区域不同的晶体特性。

公开(公告)号：US20130062660A1

公开(公告)日：2013-03-14

申请号：US13603678

申请日：2012-09-05

申请人： Masahiro HAYASHI ,  Seiji Sarayama ,  Takashi Satoh ,  Hiroshi Nambu ,  Chiharu Kimura ,  Naoya Miyoshi

发明人： Masahiro HAYASHI ,  Seiji Sarayama ,  Takashi Satoh ,  Hiroshi Nambu ,  Chiharu Kimura ,  Naoya Miyoshi

IPC分类号： H01L33/32

CPC分类号： H01L33/32 ,  H01L29/045 ,  H01L29/2003 ,  H01L33/0025 ,  H01L33/18 ,  H01L33/24

摘要： A group 13 nitride crystal has a hexagonal crystal structure and at least contains nitrogen atom and at least a kind of metal atoms selected from a group consisting of B, Al, Ga, In, and Tl. The group 13 nitride crystal includes a first region located at an inner side of a cross section intersecting a c-axis, and a second region surrounding at least a part of an outer periphery of the first region, having a thickness larger than a maximum diameter of the first region, and having a carrier density higher than that of the first region.

摘要翻译： 13族氮化物晶体具有六方晶系结构，并且至少含有氮原子和至少一种选自B，Al，Ga，In和Tl的金属原子。 13族氮化物晶体包括位于与c轴交叉的横截面的内侧的第一区域和围绕第一区域的外周的至少一部分的第二区域，该第二区域的厚度大于最大直径 并且具有比第一区域的载流子密度高的载流子密度。

公开(公告)号：US20130011677A1

公开(公告)日：2013-01-10

申请号：US13613506

申请日：2012-09-13

申请人： Hiroshi NAMBU ,  Hirokazu IWATA ,  Takashi SATOH

发明人： Hiroshi NAMBU ,  Hirokazu IWATA ,  Takashi SATOH

IPC分类号： C30B9/10 ,  C30B19/02 ,  B28D5/00 ,  C30B29/40

CPC分类号： C30B29/406 ,  C30B9/10 ,  C30B19/02 ,  C30B19/12 ,  Y10T428/2958 ,  Y10T428/2973

摘要： A large sized bulk crystal is produced which allows to cut out a practical size of crystal substrate. The gallium nitride crystal has features in which a length L of c-axis is 9 mm or more, a crystal diameter d of a cross section orthogonal to the c-axis is 100 μm, and a ratio L/d of the length L of the c-axis and the crystal diameter d of the cross section orthogonal to the c-axis is 7 or more. By enlarging this elongated needle-like crystal, a bulk crystal with a large volume can be produced, and a large sized bulk crystal can be produced which allows to cut out a practical size of crystal substrate.

摘要翻译： 产生大尺寸的块状晶体，其允许切出实际尺寸的晶体基板。 氮化镓晶体的特征在于，c轴的长度L为9mm以上，与c轴正交的截面的晶体直径d为100μm，长度L的比L / d为 与c轴正交的截面的c轴和晶体直径d为7以上。 通过扩大这种细长的针状晶体，可以制造体积大的块状晶体，并且可以生产出允许切出实际尺寸的晶体基板的大尺寸块状晶体。

公开(公告)号：US09863058B2

公开(公告)日：2018-01-09

申请号：US14708583

申请日：2015-05-11

申请人： Masahiro Hayashi ,  Seiji Sarayama ,  Takashi Satoh ,  Hiroshi Nambu ,  Chiharu Kimura ,  Naoya Miyoshi

发明人： Masahiro Hayashi ,  Seiji Sarayama ,  Takashi Satoh ,  Hiroshi Nambu ,  Chiharu Kimura ,  Naoya Miyoshi

IPC分类号： C30B29/38 ,  C30B9/12 ,  C30B29/40

CPC分类号： C30B9/12 ,  C30B29/406 ,  Y10T428/239 ,  Y10T428/26

摘要： A gallium nitride crystal having a hexagonal crystal structure includes a first region located on an inner side of a cross section intersecting c-axis of the hexagonal crystal structure, and a second region surrounding at least a part of the outer periphery of the first region in the cross section. An emission spectrum of each of the first region and the second region with electron beam or ultraviolet light excitation has a first peak including a band edge emission of gallium nitride and a second peak located in a longer wavelength area than the first peak. A peak intensity of the first peak is smaller than a peak intensity of the second peak in the first region, and a peak intensity of the first peak is greater than a peak intensity of the second peak in the second region.