A light emitting device is provided, which includes an n-type layer, a p-type layer, and an active region sandwiched between the n-type layer and the p-type layer. The active-region includes one or more quantum wells each sandwiched by quantum barriers, at least one of the quantum wells has a polarization induced electric field equal to or greater than 106 V/cm, and at least one of the quantum barriers adjacent to the at least one of the quantum wells is doped to generate a PN junction maximum electric field equal to or greater than the polarization induced electric field to substantially cancel out the polarization induced electric field within the at least one of the quantum wells.