Invention Application
- Patent Title: Method for Making a Sensor Device Using a Graphene Layer
- Patent Title (中): 制造使用石墨烯层的传感器装置的方法
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Application No.: US14745428Application Date: 2015-06-20
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Publication No.: US20150287788A1Publication Date: 2015-10-08
- Inventor: Klaus Elian , Guenther Ruhl , Horst Theuss , Irmgard Escher-Poeppel
- Applicant: Infineon Technologies AG
- Main IPC: H01L29/16
- IPC: H01L29/16 ; H01L23/00 ; H01L23/495 ; H01L23/29 ; H01L23/31

Abstract:
A graphene layer is generated on a substrate. A plastic material is deposited on the graphene layer to at least partially cover the graphene layer. The substrate is separated into at least two substrate pieces.
Public/Granted literature
- US09536953B2 Method for making a sensor device using a graphene layer Public/Granted day:2017-01-03
Information query
IPC分类: