公开(公告)号：US20210013090A1

公开(公告)日：2021-01-14

申请号：US17028503

申请日：2020-09-22

申请人： Infineon Technologies AG

发明人： Wolfgang Lehnert ,  Rudolf Berger ,  Rudolf Lehner ,  Gerhard Metzger-Brueckl ,  Guenther Ruhl

IPC分类号： H01L21/762 ,  H01L21/78 ,  H01L21/683

摘要： A method for manufacturing a semiconductor device includes implanting gas ions in a donor wafer and bonding the donor wafer to a carrier wafer to form a compound wafer. The method also includes subjecting the compound wafer to a thermal treatment to cause separation along a delamination layer and growing an epitaxial layer on a portion of separated compound wafer to form a semiconductor device layer. The method further includes cutting the carrier wafer.

公开(公告)号：US10396170B2

公开(公告)日：2019-08-27

申请号：US15848614

申请日：2017-12-20

申请人： Infineon Technologies AG

发明人： Hans-Joachim Schulze ,  Guenther Ruhl ,  Roland Rupp

IPC分类号： H01L29/16 ,  H01L29/417 ,  H01L29/45 ,  H01L29/66 ,  H01L29/78 ,  C01B32/184

摘要： A semiconductor device includes a transistor doping region of a vertical transistor structure arranged in a semiconductor substrate. Additionally, the semiconductor device includes a graphene layer portion located adjacent to at least a portion of the transistor doping region at a surface of the semiconductor substrate. The semiconductor device further includes a transistor wiring structure located adjacent to the graphene layer portion.

公开(公告)号：US10370240B2

公开(公告)日：2019-08-06

申请号：US15646161

申请日：2017-07-11

申请人： Infineon Technologies AG

发明人： Matthias Koenig ,  Guenther Ruhl

IPC分类号： B81C1/00 ,  B81B3/00

摘要： A layer structure may include a carrier, a two-dimensional layer, and a holding structure. The holding structure is arranged on the carrier and holds the two-dimensional layer on the carrier such that at least a portion of the two-dimensional layer is spaced apart from the carrier. The holding structure includes a holding portion extending from the two-dimensional layer towards the carrier beyond the at least a portion of the two-dimensional layer spaced apart from the carrier.

公开(公告)号：US10347723B2

公开(公告)日：2019-07-09

申请号：US16188994

申请日：2018-11-13

申请人： Infineon Technologies AG

发明人： Guenther Ruhl ,  Gunther Lippert ,  Hans-Joachim Schulze ,  Thomas Zimmer

IPC分类号： H01L21/20 ,  H01L29/16 ,  H01L21/762 ,  H01L21/78 ,  H01L29/06 ,  H01L21/683 ,  H01L21/02 ,  H01L21/56 ,  H01L21/18 ,  H01L29/165 ,  H01L29/04 ,  H01L21/265 ,  H01L21/324

摘要： A method for manufacturing a semiconductor device includes: providing a carrier wafer and a silicon carbide wafer; forming a first graphene material on a first side of the silicon carbide wafer; bonding the first side of the silicon carbide wafer with the first graphene material to the carrier wafer; and splitting the silicon carbide wafer bonded to the carrier wafer into a silicon carbide layer thinner than the silicon carbide wafer and a residual silicon carbide wafer, the silicon carbide layer remaining bonded to the carrier wafer during the splitting.

公开(公告)号：US20180047619A1

公开(公告)日：2018-02-15

申请号：US15659446

申请日：2017-07-25

申请人： Infineon Technologies AG

发明人： Wolfgang Lehnert ,  Rudolf Berger ,  Rudolf Lehner ,  Gerhard Metzger-Brueckl ,  Guenther Ruhl

IPC分类号： H01L21/762 ,  H01L21/683

摘要： A method for manufacturing a semiconductor device includes providing a carrier wafer; and forming a semiconductor device layer on the carrier wafer. After front side processing of the semiconductor device layer, the carrier wafer is removed by cutting along a plane which is parallel to the semiconductor device layer.

公开(公告)号：US09576844B2

公开(公告)日：2017-02-21

申请号：US14962393

申请日：2015-12-08

申请人： Infineon Technologies AG

发明人： Rudolf Berger ,  Hermann Gruber ,  Wolfgang Lehnert ,  Guenther Ruhl ,  Raimund Foerg ,  Anton Mauder ,  Hans-Joachim Schulze ,  Karsten Kellermann ,  Michael Sommer ,  Christian Rottmair ,  Roland Rupp

IPC分类号： H01L21/30 ,  H01L21/762 ,  H01L21/02 ,  H01L21/20 ,  C30B25/18 ,  H01L21/324 ,  H01L21/265 ,  H01L21/321 ,  H01L29/16 ,  H01L29/20

CPC分类号： H01L21/76254 ,  C30B25/186 ,  H01L21/02115 ,  H01L21/02282 ,  H01L21/02598 ,  H01L21/2007 ,  H01L21/265 ,  H01L21/3212 ,  H01L21/324 ,  H01L21/76251 ,  H01L29/1608 ,  H01L29/20 ,  H01L29/2003

摘要： A composite wafer is manufactured by providing a carrier wafer including graphite and a protective layer, forming a bonding layer, and bonding the carrier wafer to a semiconductor wafer through the bonding layer.

摘要翻译： 通过提供包括石墨和保护层的载体晶片来形成复合晶片，形成结合层，并通过粘合层将载体晶片接合到半导体晶片。

公开(公告)号：US20160313288A1

公开(公告)日：2016-10-27

申请号：US15136469

申请日：2016-04-22

申请人： Infineon Technologies AG

发明人： Horst Theuss ,  Gottfried Beer ,  Sebastian Beer ,  Alfons Dehe ,  Franz Jost ,  Stefan Kolb ,  Guenther Ruhl ,  Rainer Markus Schaller

IPC分类号： G01N29/24 ,  G01N29/02

CPC分类号： G01N29/2425 ,  G01N29/032 ,  G01N2291/021

摘要： A photo-acoustic gas sensor includes a light emitter unit having a light emitter configured to emit a beam of light pulses with a predetermined repetition frequency and a wavelength corresponding to an absorption band of a gas to be sensed, and a detector unit having a microphone. The light emitter unit is arranged so that the beam of light pulses traverses an area configured to accommodate the gas. The detector unit is arranged so that the microphone can receive a signal oscillating with the repetition frequency.

摘要翻译： 光声气体传感器包括光发射器单元，其具有光发射器，其被配置为发射具有预定重复频率和对应于待感测气体的吸收带的波长的光脉冲束，以及具有麦克风的检测器单元 。 光发射器单元布置成使得光束脉冲穿过配置成容纳气体的区域。 检测器单元布置成使得麦克风可以接收以重复频率振荡的信号。

公开(公告)号：US20160104640A1

公开(公告)日：2016-04-14

申请号：US14511199

申请日：2014-10-10

申请人： Infineon Technologies AG

发明人： Guenther Ruhl ,  Klemens Pruegl

IPC分类号： H01L21/768 ,  H01L21/02

CPC分类号： H01L21/02527 ,  C01B32/186 ,  H01L21/0237 ,  H01L21/02488 ,  H01L21/02614 ,  H01L21/02631 ,  H01L21/02664 ,  H01L21/02667 ,  H01L29/1606

摘要： According to various embodiments, a method for processing a carrier may include: co-depositing at least one metal from a first source and carbon from a second source over a surface of the carrier to form a first layer; forming a second layer over the first layer, the second layer including a diffusion barrier material, wherein the solubility of carbon in the diffusion barrier material is less than in the at least one metal; and forming a graphene layer at the surface of the carrier from the first layer by a temperature treatment.

摘要翻译： 根据各种实施例，用于处理载体的方法可以包括：在载体的表面上共同沉积来自第一源的至少一种金属和来自第二源的碳以形成第一层; 在第一层上形成第二层，第二层包括扩散阻挡材料，其中碳在扩散阻挡材料中的溶解度小于在至少一种金属中的溶解度; 以及通过温度处理从所述第一层在所述载体的表面上形成石墨烯层。

公开(公告)号：US09252045B2

公开(公告)日：2016-02-02

申请号：US13776796

申请日：2013-02-26

申请人： Infineon Technologies AG

发明人： Rudolf Berger ,  Hermann Gruber ,  Wolfgang Lehnert ,  Guenther Ruhl ,  Raimund Foerg ,  Anton Mauder ,  Hans-Joachim Schulze

IPC分类号： H01L21/30 ,  H01L21/46 ,  H01L21/31 ,  H01L21/469 ,  H01L21/762 ,  H01L29/02 ,  H01L29/16 ,  H01L21/02

CPC分类号： H01L21/76251 ,  H01L21/02002 ,  H01L21/0237 ,  H01L21/0243 ,  H01L21/02527 ,  H01L21/02601 ,  H01L21/02628 ,  H01L21/7624 ,  H01L29/02 ,  H01L29/04 ,  H01L29/16 ,  H01L29/1608 ,  H01L29/161

摘要： A composite wafer including a carrier substrate having a graphite core and a monocrystalline semiconductor substrate or layer attached to the carrier substrate and a corresponding method for manufacturing such a composite wafer is provided.

摘要翻译： 提供了一种复合晶片，其包括具有石墨芯和附着于载体基板的单晶半导体衬底或层的载体衬底和用于制造这种复合晶片的相应方法。

公开(公告)号：US09209497B2

公开(公告)日：2015-12-08

申请号：US13717417

申请日：2012-12-17

申请人： Infineon Technologies AG

发明人： Klaus Elian ,  Horst Theuss ,  Guenther Ruhl

IPC分类号： H01M2/34 ,  H01M10/48 ,  G01M3/00 ,  G01M3/32 ,  G01M3/22 ,  G01M3/36 ,  H01M10/052

CPC分类号： H01M10/48 ,  G01M3/227 ,  G01M3/3272 ,  G01M3/36 ,  H01M2/345 ,  H01M10/052 ,  H01M2200/20

摘要： A sensor module includes an enclosure adapted to hermetically seal an opening or a hole on the outer surface of a casing or packaging, a sensor element and a membrane. The membrane is arranged between the enclosure and the opening or hole of the casing or packaging.

摘要翻译： 传感器模块包括适于气密地密封壳体或包装，传感器元件和膜的外表面上的开口或孔的外壳。 隔膜布置在外壳和外壳或包装的开口或孔之间。