Invention Application
- Patent Title: SEMICONDUCTOR DEVICES AND METHODS OF MAKING SEMICONDUCTOR DEVICES
- Patent Title (中): 半导体器件及制造半导体器件的方法
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Application No.: US14253504Application Date: 2014-04-15
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Publication No.: US20150294940A1Publication Date: 2015-10-15
- Inventor: Owen R. Fay , Steven R. Smith
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Main IPC: H01L23/538
- IPC: H01L23/538 ; H01L25/065 ; H01L25/00 ; H01L23/29

Abstract:
Semiconductor devices may include a substrate and a semiconductor die on the substrate. The semiconductor die may include an active surface and a lateral edge at a periphery of the active surface. An electrically insulating material may be located on the active surface proximate the lateral edge. The electrically insulating material may be distinct from any other material located on the active surface. A wire bond may extend from the active surface, over the electrically insulating material, to the substrate. Methods of making semiconductor devices may involve positioning an electrically insulating material on an active surface of a semiconductor die proximate a lateral edge at a periphery of an active surface. After positioning the electrically insulating material on the active surface, a wire bond extending from the active surface, over the electrically insulating material, to the substrate may be formed.
Public/Granted literature
- US10418330B2 Semiconductor devices and methods of making semiconductor devices Public/Granted day:2019-09-17
Information query
IPC分类: