公开(公告)号：US20150294940A1

公开(公告)日：2015-10-15

申请号：US14253504

申请日：2014-04-15

Applicant: Micron Technology, Inc.

Inventor： Owen R. Fay ,  Steven R. Smith

IPC: H01L23/538 ,  H01L25/065 ,  H01L25/00 ,  H01L23/29

CPC classification number: H01L23/5386 ,  H01L23/3135 ,  H01L23/3157 ,  H01L24/45 ,  H01L24/48 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/05599 ,  H01L2224/16145 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/85399 ,  H01L2224/8592 ,  H01L2225/0651 ,  H01L2225/06527 ,  H01L2225/06582 ,  H01L2924/00014 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45015 ,  H01L2924/207

Abstract: Semiconductor devices may include a substrate and a semiconductor die on the substrate. The semiconductor die may include an active surface and a lateral edge at a periphery of the active surface. An electrically insulating material may be located on the active surface proximate the lateral edge. The electrically insulating material may be distinct from any other material located on the active surface. A wire bond may extend from the active surface, over the electrically insulating material, to the substrate. Methods of making semiconductor devices may involve positioning an electrically insulating material on an active surface of a semiconductor die proximate a lateral edge at a periphery of an active surface. After positioning the electrically insulating material on the active surface, a wire bond extending from the active surface, over the electrically insulating material, to the substrate may be formed.

Abstract translation: 半导体器件可以在衬底上包括衬底和半导体管芯。 半导体管芯可以包括有源表面和在有源表面的周边处的侧边缘。 电绝缘材料可以位于靠近侧边缘的有源表面上。 电绝缘材料可以不同于位于活性表面上的任何其它材料。 引线接合可以从电绝缘材料上的有源表面延伸到衬底。 制造半导体器件的方法可以包括将电绝缘材料定位在半导体管芯的有源表面上，靠近有源表面周围的侧边缘。 在将电绝缘材料定位在有源表面上之后，可以形成从有源表面延伸到电绝缘材料上的引线键合到基板上。

公开(公告)号：US10418330B2

公开(公告)日：2019-09-17

申请号：US14253504

申请日：2014-04-15

Applicant: Micron Technology, Inc.

Inventor： Owen R. Fay ,  Steven R. Smith

IPC: H01L23/538 ,  H01L25/065 ,  H01L25/00 ,  H01L23/00 ,  H01L23/31

Abstract: Semiconductor devices may include a substrate and a semiconductor die on the substrate. The semiconductor die may include an active surface and a lateral edge at a periphery of the active surface. An electrically insulating material may be located on the active surface proximate the lateral edge. The electrically insulating material may be distinct from any other material located on the active surface. A wire bond may extend from the active surface, over the electrically insulating material, to the substrate. Methods of making semiconductor devices may involve positioning an electrically insulating material on an active surface of a semiconductor die proximate a lateral edge at a periphery of an active surface. After positioning the electrically insulating material on the active surface, a wire bond extending from the active surface, over the electrically insulating material, to the substrate may be formed.