发明申请
- 专利标题: SEMICONDUCTOR DEVICE
- 专利标题(中): 半导体器件
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申请号: US14443199申请日: 2012-12-20
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公开(公告)号: US20150295042A1公开(公告)日: 2015-10-15
- 发明人: Satoru Kameyama , Keisuke Kimura
- 申请人: Satoru KAMEYAMA , Keisuke KIMURA
- 申请人地址: JP Toyota-shi, Aichi-ken
- 专利权人: TOYOTA JIDOSHA KABUSHIKI KAISHA
- 当前专利权人: TOYOTA JIDOSHA KABUSHIKI KAISHA
- 当前专利权人地址: JP Toyota-shi, Aichi-ken
- 国际申请: PCT/JP2012/083100 WO 20121220
- 主分类号: H01L29/06
- IPC分类号: H01L29/06 ; H01L29/08 ; H01L29/861 ; H01L29/10 ; H01L27/06 ; H01L29/739
摘要:
The present application discloses a semiconductor device in which an IGBT region and a diode region are formed on one semiconductor substrate. The IGBT region includes: a collector layer; an IGBT drift layer; a body layer; a gate electrode; and an emitter layer. The diode region includes: a cathode layer; a diode drift layer; an anode layer; a trench electrode; and an anode contact layer. The diode region is divided into unit diode regions by the gate electrode or the trench electrode. In a unit diode region adjacent to the IGBT region, when seen in a plan view of the front surface of the semiconductor substrate, the anode layer and the anode contact layer are mixedly placed, and the anode contact layer is placed at least in a location opposite to the emitter layer with the gate electrode interposed therebetween.