发明申请
US20150302129A1 MASK ASSIGNMENT TECHNIQUE FOR M1 METAL LAYER IN TRIPLE-PATTERNING LITHOGRAPHY
审中-公开
M1金属层在三维图形中的掩蔽分配技术
- 专利标题: MASK ASSIGNMENT TECHNIQUE FOR M1 METAL LAYER IN TRIPLE-PATTERNING LITHOGRAPHY
- 专利标题(中): M1金属层在三维图形中的掩蔽分配技术
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申请号: US14255677申请日: 2014-04-17
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公开(公告)号: US20150302129A1公开(公告)日: 2015-10-22
- 发明人: Xiangdong CHEN , Mukul GUPTA , Ohsang KWON , Foua VANG
- 申请人: QUALCOMM Incorporated
- 申请人地址: US CA San Diego
- 专利权人: QUALCOMM Incorporated
- 当前专利权人: QUALCOMM Incorporated
- 当前专利权人地址: US CA San Diego
- 主分类号: G06F17/50
- IPC分类号: G06F17/50
摘要:
In an embodiment, a method in the manufacture of triple-patterning lithography masks, each mask represented by one of three colors, where each cell layout has exactly one polygonal pattern at one-half the different-color spacing from its left boundary, and exactly one polygonal pattern at one-half the different-color spacing from its right boundary. During placement of the cell layouts into a row, the method includes switching assigned colors in a cell layout to ensure that no two polygonal patterns of the same color in the layout are at a distance from each other less than the same-color spacing.
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