发明申请
US20150310910A1 Multi-Level Memory Array Having Resistive Elements for Multi-Bit Data Storage
有权
具有用于多位数据存储的电阻元件的多级存储器阵列
- 专利标题: Multi-Level Memory Array Having Resistive Elements for Multi-Bit Data Storage
- 专利标题(中): 具有用于多位数据存储的电阻元件的多级存储器阵列
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申请号: US14627760申请日: 2015-02-20
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公开(公告)号: US20150310910A1公开(公告)日: 2015-10-29
- 发明人: Dipankar Pramanik , David E. Lazovsky , Tim Minvielle , Takeshi Yamaguchi
- 申请人: Intermolecular Inc. , Kabushiki Kaisha Toshiba , SanDisk 3D LLC
- 主分类号: G11C11/56
- IPC分类号: G11C11/56 ; G11C13/00
摘要:
A resistor array for multi-bit data storage without the need to increase the size of a memory chip or scale down the feature size of a memory cell contained within the memory chip is provided. The resistor array incorporates a number of discrete resistive elements to be selectively connected, in different series combinations, to at least one memory cell or memory device. In one configuration, by connecting each memory cell or device with at least one resistor array, a resistive switching layer found in the resistive switching memory element of the connected memory device is capable of being at multiple resistance states for storing multiple bits of digital information. During device programming operations, when a desired series combination of the resistive elements within the resistor array is selected, the resistive switching layer in the connected memory device can be in a desired resistance state.
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