Invention Application
US20150311382A1 METHOD OF GROWING N-TYPE NITRIDE SEMICONDUCTOR, LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME
审中-公开
生长N型氮化物半导体的方法，发光二极管及其制造方法
- Patent Title: METHOD OF GROWING N-TYPE NITRIDE SEMICONDUCTOR, LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME
- Patent Title (中): 生长N型氮化物半导体的方法，发光二极管及其制造方法
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Application No.: US14599300Application Date: 2015-01-16
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Publication No.: US20150311382A1Publication Date: 2015-10-29
- Inventor: Kyung Hae Kim , Jung Whan Jung
- Applicant: Seoul Viosys Co., Ltd.
- Priority: KR1020140050041 20140425; KR1020140107556 20140819
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L33/06
Abstract:
A light emitting diode includes: an n-type nitride semiconductor layer; an active layer over the n-type nitride semiconductor layer; and a p-type nitride semiconductor layer over the active layer. The n-type nitride semiconductor layer includes: an n-type nitride layer; a first intermediate layer over the n-type nitride layer; an n-type modulation-doped layer over the first intermediate layer. The light emitting diodes includes a second intermediate layer over the n-type modulation-doped layer. The second intermediate layer includes a sub-layer having a higher n-type doping concentration that an n-type doping concentration of the n-type modulation-doped layer.
Public/Granted literature
- US10109767B2 Method of growing n-type nitride semiconductor, light emitting diode and method of fabricating the same Public/Granted day:2018-10-23
Information query
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