A dynamic reconfigurable semiconductor device is provided. The semiconductor device includes two logic blocks, a pass transistor, two selection transistors and a precharge transistor. The two selection transistors are arranged to sandwich the pass transistor so that a source and a drain of the pass transistor are located between the sources of the two selection transistors. The sources and the drains of the two selection transistors are located between the two logic blocks. When the two selection transistors are in off-state, a potential can be supplied to the source or the drain of the pass transistor via the precharge transistor, and by electrical conduction, another potential for a context is applied to the gate of the pass transistor. When the context is executed, the gate of the pass transistor is in a floating state, the two selection transistors are in on-state, and the precharge transistor is in off-state.