公开(公告)号：US20150311897A1

公开(公告)日：2015-10-29

申请号：US14689262

申请日：2015-04-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Nora BJORKLUND ,  Takeshi AOKI ,  Yoshiyuki KUROKAWA

IPC: H03K19/177 ,  H03K19/173

CPC classification number: H03K19/1776 ,  H03K19/1733 ,  H03K19/17736

Abstract: A dynamic reconfigurable semiconductor device is provided. The semiconductor device includes two logic blocks, a pass transistor, two selection transistors and a precharge transistor. The two selection transistors are arranged to sandwich the pass transistor so that a source and a drain of the pass transistor are located between the sources of the two selection transistors. The sources and the drains of the two selection transistors are located between the two logic blocks. When the two selection transistors are in off-state, a potential can be supplied to the source or the drain of the pass transistor via the precharge transistor, and by electrical conduction, another potential for a context is applied to the gate of the pass transistor. When the context is executed, the gate of the pass transistor is in a floating state, the two selection transistors are in on-state, and the precharge transistor is in off-state.

Abstract translation: 提供动态可重构半导体器件。 半导体器件包括两个逻辑块，传输晶体管，两个选择晶体管和预充电晶体管。 两个选择晶体管被布置成夹持传输晶体管，使得传输晶体管的源极和漏极位于两个选择晶体管的源极之间。 两个选择晶体管的源极和漏极位于两个逻辑块之间。 当两个选择晶体管处于截止状态时，可以通过预充电晶体管将电位提供给传输晶体管的源极或漏极，并且通过电导通，将上下文的另一个电位施加到传输晶体管的栅极 。 当执行上下文时，传输晶体管的栅极处于浮置状态，两个选择晶体管处于导通状态，并且预充电晶体管处于截止状态。