Invention Application
- Patent Title: COMPOSITION AND METHOD FOR LOW TEMPERATURE CHEMICAL VAPOR DEPOSITION OF SILICON-CONTAINING FILMS INCLUDING SILICON CARBONITRIDE AND SILICON OXYCARBONITRIDE FILMS
- Patent Title (中): 含有碳化硅和硅氧化碳膜的含硅薄膜的低温化学气相沉积的组合物和方法
-
Application No.: US14798775Application Date: 2015-07-14
-
Publication No.: US20150315215A1Publication Date: 2015-11-05
- Inventor: Ziyun Wang , Chongying Xu , Bryan Hendrix , Jeffrey Roeder , Tianniu Chen , Thomas H. Baum
- Applicant: Entegris, Inc.
- Applicant Address: US MA Billerica
- Assignee: Entegris, Inc.
- Current Assignee: Entegris, Inc.
- Current Assignee Address: US MA Billerica
- Main IPC: C07F7/10
- IPC: C07F7/10 ; H01L21/02
Abstract:
Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as films including silicon carbonitride, silicon oxycarbonitride, and silicon nitride (Si3N4), and a method of depositing the silicon precursors on substrates using low temperature (e.g.,
Public/Granted literature
Information query
