-
公开(公告)号：US12037681B2
公开(公告)日：2024-07-16
申请号：US17854473
申请日：2022-06-30
Applicant: ENTEGRIS, INC.
Inventor： Sungsil Cho , Seobong Chang , Jae Eon Park , Bryan C. Hendrix , Thomas H. Baum
CPC classification number: C23C16/36 , C23C16/56 , C23C22/73 , H01L21/0214 , H01L21/02263
Abstract: Provided is a method for forming a silicon oxycarbonitride film (SiOCN) with varying proportions of each element, using a disilane precursor under vapor deposition conditions, wherein the percent carbon incorporation into the SiOCN film may be varied between about 5 to about 60%, by utilizing co-reactants chosen from oxygen, ammonia, and nitrous oxide gas. The carbon-enriched SiOCN films thus formed may be converted to pure silicon dioxide films after an etch stop protocol by treatment with O2 plasma.
-
公开(公告)号：US20240035157A1
公开(公告)日：2024-02-01
申请号：US18229077
申请日：2023-08-01
Applicant: ENTEGRIS, INC.
Inventor： Robert Wright, JR. , Thomas H. Baum , Bryan C. Hendrix , Shawn D. Nguyen , Han Wang , Philip S. H. Chen
IPC: C23C16/455 , H01L21/02 , C23C16/56 , C23C16/18
CPC classification number: C23C16/45534 , H01L21/0228 , C23C16/56 , C23C16/18
Abstract: Described are vapor deposition methods for depositing metal films or layers onto a substrate, wherein the metal is molybdenum or tungsten; the methods involve organometallic precursor compounds that contain the metal and one or more carbon-containing ligands, and include depositing a metal layer formed from the metal of the precursor, onto a substrate, followed by introducing oxidizer to the formed metal layer.
-
公开(公告)号：US11807653B2
公开(公告)日：2023-11-07
申请号：US17736855
申请日：2022-05-04
Applicant: ENTEGRIS, INC.
Inventor： David M. Ermert , Thomas H. Baum , Robert Wright, Jr.
IPC: C07F11/00 , H01L21/3205 , H01L21/02
CPC classification number: C07F11/00 , H01L21/02192 , H01L21/32051
Abstract: The invention provides a facile process for preparing various Group VI precursor compounds useful in the vapor deposition of such Group VI metals onto solid substrates, especially microelectronic semiconductor device substrates. The process provides an effective means to obtain such volatile materials, which can then be sources of molybdenum, chromium, or tungsten-containing materials to be deposited on such substrates. Additionally, the invention provides a method for vapor deposition of such compounds onto microelectronic device substrates.
-
公开(公告)号：US11761086B2
公开(公告)日：2023-09-19
申请号：US15120844
申请日：2015-02-19
Applicant: ENTEGRIS, INC.
Inventor： Thomas H. Baum , Scott L. Battle , John M. Cleary , David W. Peters , Philip S.H. Chen
CPC classification number: C23C16/50 , C07F15/06 , C23C16/06 , C23C16/16 , C23C16/18 , C23C16/45525 , C23C16/483
Abstract: Cobalt precursors are described, having application for vapor deposition of cobalt on substrates, such as in atomic layer deposition (ALD) and chemical vapor deposition (CVD) processes for forming interconnects, capping structures, and bulk cobalt conductors, in the manufacture of integrated circuitry and thin film products.
-
公开(公告)号：US11560397B2
公开(公告)日：2023-01-24
申请号：US17370722
申请日：2021-07-08
Applicant: ENTEGRIS, INC.
Inventor： David M. Ermert , Thomas H. Baum
Abstract: The invention provides a facile process for preparing various Group VI precursor compounds, set forth below as Formula (I), useful in the vapor deposition of certain Group VI metals onto solid substrates, especially microelectronic semiconductor device substrates. Also provided is a process for the preparation of such precursor compounds. Additionally, the invention provides a method for vapor deposition of Group VI metals onto microelectronic device substrates utilizing the precursor compounds of the invention.
-
Patent Agency Ranking
公开(公告)号：US11466038B2
公开(公告)日：2022-10-11
申请号：US16899060
申请日：2020-06-11
Applicant: ENTEGRIS, INC.
Inventor： Philip S. H. Chen , Eric Condo , Bryan C. Hendrix , Thomas H. Baum , David Kuiper
IPC: C07F7/18 , C07F7/10 , C01B21/082 , C07F7/08 , C23C16/455 , H01L21/02 , C23C16/36 , C23C16/30
Abstract: Provided is a plasma enhanced atomic layer deposition (PEALD) process for depositing etch-resistant SiOCN films. These films provide improved growth rate, improved step coverage and excellent etch resistance to wet etchants and post-deposition plasma treatments containing O2 and NH3 co-reactants. This PEALD process relies on one or more precursors reacting in tandem with the plasma exposure to deposit the etch-resistant thin-films of SiOCN. The films display excellent resistance to wet etching with dilute aqueous HF solutions, both after deposition and after post-deposition plasma treatment(s). Accordingly, these films are expected to display excellent stability towards post-deposition fabrication steps utilized during device manufacturing and build.
-
公开(公告)号：US11352383B2
公开(公告)日：2022-06-07
申请号：US16803547
申请日：2020-02-27
Applicant: ENTEGRIS, INC.
Inventor： David M. Ermert , Thomas H. Baum , Robert Wright, Jr.
IPC: C07F11/00 , H01L21/3205 , H01L21/02
Abstract: The invention provides a facile process for preparing various Group VI precursor compounds useful in the vapor deposition of such Group VI metals onto solid substrates, especially microelectronic semiconductor device substrates. The process provides an effective means to obtain such volatile materials, which can then be sources of molybdenum, chromium, or tungsten-containing materials to be deposited on such substrates. Additionally, the invention provides a method for vapor deposition of such compounds onto microelectronic device substrates.
-
公开(公告)号：US11203604B2
公开(公告)日：2021-12-21
申请号：US16706347
申请日：2019-12-06
Applicant: ENTEGRIS, INC.
Inventor： David Kuiper , Manish Khandelwal , Thomas M. Cameron , Thomas H. Baum , John Cleary
IPC: C07F7/08
Abstract: Provided is a process for preparing certain silane precursor compounds, e.g., triiodosilane from trichlorosilane utilizing lithium iodide in powder form and catalyzed by tertiary amines. The process provides triiodosilane in high yields and high purity. Triiodosilane is a precursor compound useful in the atomic layer deposition of silicon onto various microelectronic device structures.
-
公开(公告)号：US10793947B2
公开(公告)日：2020-10-06
申请号：US15674156
申请日：2017-08-10
Applicant: Entegris, Inc.
Inventor： Philip S. H. Chen , Bryan C. Hendrix , Thomas H. Baum
Abstract: A deposited cobalt composition is described, including cobalt and one or more alloy component that is effective in combination with cobalt to enhance adhesion to a substrate when exposed on the substrate to variable temperature and/or delaminative force conditions, as compared to corresponding elemental cobalt, wherein the one or more alloy component is selected from the group consisting of boron, phosphorous, tin, antimony, indium, and gold. Such deposited cobalt composition may be employed for metallization in semiconductor devices and device precursor structures, flat-panel displays, and solar panels, and provides highly adherent metallization when the metallized substrate is subjected to thermal cycling and/or chemical mechanical planarization operations in the manufacturing of the semiconductor, flat-panel display, or solar panel product.
-
10.发明授权公开(公告)号：US10451540B2
公开(公告)日：2019-10-22
申请号：US15544327
申请日：2016-01-16
Applicant: ENTEGRIS, INC.
Inventor： Thomas H. Baum , John P. Coates , Robert L. Wright, Jr.
Abstract: A multipass cell assembly for monitoring of fluid is described, as well as fluid processing systems utilizing same, and associated methods of use of such multipass cell assembly for fluid monitoring. The multipass cell assembly is usefully employed in fluid processing operations such as monitoring of vapor deposition process reactants, e.g., reactants used for vapor deposition metallization of tungsten from a tungsten carbonyl precursor.
-
-
-
-
-
-
-
-
-
Search Results
70
records
(took 0.022 seconds)
