Invention Application
- Patent Title: FRONT SIDE ILLUMINATED SEMICONDUCTOR STRUCTURE WITH IMPROVED LIGHT ABSORPTION EFFICIENCY AND MANUFACTURING METHOD THEREOF
- Patent Title (中): 具有改进的光吸收效率及其制造方法的前侧照明半导体结构
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Application No.: US14590270Application Date: 2015-01-06
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Publication No.: US20150325616A1Publication Date: 2015-11-12
- Inventor: SEN-HUANG HUANG , HUAN-KUN PAN , YI-CHANG CHANG , CHING-WEI CHEN
- Applicant: PIXART IMAGING INC.
- Priority: TW103116677 20140512; TW103136414 20141021
- Main IPC: H01L27/146
- IPC: H01L27/146
Abstract:
There is provided a front side illuminated (FSI) semiconductor structure with improved light absorption efficiency which is configured to provide a reflecting layer on a bottom of the FSI semiconductor structure to enhance the light absorption efficiency, wherein the reflecting layer is manufactured in the packaging process or the semiconductor process.
Public/Granted literature
- US09536914B2 Front side illuminated semiconductor structure with improved light absorption efficiency Public/Granted day:2017-01-03
Information query
IPC分类:
