公开(公告)号：US20150325616A1

公开(公告)日：2015-11-12

申请号：US14590270

申请日：2015-01-06

Applicant: PIXART IMAGING INC.

Inventor： SEN-HUANG HUANG ,  HUAN-KUN PAN ,  YI-CHANG CHANG ,  CHING-WEI CHEN

IPC: H01L27/146

CPC classification number: H01L27/1462 ,  H01L27/14609 ,  H01L27/14618 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/14685

Abstract: There is provided a front side illuminated (FSI) semiconductor structure with improved light absorption efficiency which is configured to provide a reflecting layer on a bottom of the FSI semiconductor structure to enhance the light absorption efficiency, wherein the reflecting layer is manufactured in the packaging process or the semiconductor process.

Abstract translation: 提供了具有改善的光吸收效率的前侧照明（FSI）半导体结构，其被配置为在FSI半导体结构的底部上提供反射层以增强光吸收效率，其中反射层在包装过程中制造 或半导体工艺。