发明申请
- 专利标题: Fabrication of Tungsten MEMS Structures
- 专利标题(中): 钨MEMS结构的制造
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申请号: US14670829申请日: 2015-03-27
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公开(公告)号: US20150336790A1公开(公告)日: 2015-11-26
- 发明人: John A. Geen , George M. Molnar , Gregory S. Davis , Bruce Ma , Kenneth J. Cole , James Timony , Kenneth Flanders
- 申请人: Analog Devices, Inc.
- 主分类号: B81B3/00
- IPC分类号: B81B3/00 ; B81C1/00
摘要:
Thick (i.e., greater than two microns), fine-grained, low-stress tungsten MEMS structures are fabricated at low temperatures, particularly for so-called “MEMS last” fabrication processes (e.g., when MEMS structures are fabricated after electronic circuitry is fabricated). Means for very accurately etching structural details from the deposited tungsten layer and for strongly and stably anchoring the tungsten layer to an underlying substrate are disclosed. Also, means for removing a sacrificial layer underlying the mobile tungsten layer without damaging the tungsten or allowing it to be drawn down and stuck by surface tension is disclosed.
公开/授权文献
- US09878901B2 Fabrication of tungsten MEMS structures 公开/授权日:2018-01-30