公开(公告)号：US20230154875A1

公开(公告)日：2023-05-18

申请号：US18148982

申请日：2022-12-30

Applicant: Analog Devices, Inc.

Inventor： Daniel Piedra ,  James G. Fiorenza ,  Puneet Srivastava ,  Andrew Proudman ,  Kenneth Flanders ,  Denis Michael Murphy ,  Leslie P. Green ,  Peter R. Stubler

IPC: H01L23/66 ,  H01L27/06 ,  H01L29/20 ,  H01L29/205 ,  H01L29/45 ,  H01L23/48 ,  H01L21/285 ,  H01L29/66 ,  H01L21/8252 ,  H01L29/778

CPC classification number: H01L23/66 ,  H01L21/8252 ,  H01L21/28575 ,  H01L23/481 ,  H01L27/0605 ,  H01L27/0629 ,  H01L28/60 ,  H01L29/205 ,  H01L29/452 ,  H01L29/2003 ,  H01L29/7786 ,  H01L29/66462 ,  H01L23/53214 ,  H01L2223/6616 ,  H01L2223/6683

Abstract: Gallium nitride-based monolithic microwave integrated circuits (MMICs) can comprise aluminum-based metals. Electrical contacts for gates, sources, and drains of transistors can include aluminum-containing metallic materials. Additionally, connectors, inductors, and interconnect devices can also comprise aluminum-based metals. The gallium-based MMICs can be manufactured in complementary metal oxide semiconductor (CMOS) facilities with equipment that produces silicon-based semiconductor devices.

公开(公告)号：US20230133481A1

公开(公告)日：2023-05-04

申请号：US18148996

申请日：2022-12-30

Applicant: Analog Devices, Inc.

Inventor： Daniel Piedra ,  James G. Fiorenza ,  Puneet Srivastava ,  Andrew Proudman ,  Kenneth Flanders ,  Denis Michael Murphy ,  Leslie P. Green ,  Peter R. Stubler

IPC: H01L23/66 ,  H01L27/06 ,  H01L29/20 ,  H01L29/205 ,  H01L29/45 ,  H01L23/48 ,  H01L21/285 ,  H01L29/66 ,  H01L21/8252 ,  H01L29/778

Abstract: Gallium nitride-based monolithic microwave integrated circuits (MMICs) can comprise aluminum-based metals. Electrical contacts for gates, sources, and drains of transistors can include aluminum-containing metallic materials. Additionally, connectors, inductors, and interconnect devices can also comprise aluminum-based metals. The gallium-based MMICs can be manufactured in complementary metal oxide semiconductor (CMOS) facilities with equipment that produces silicon-based semiconductor devices.

公开(公告)号：US12261134B2

公开(公告)日：2025-03-25

申请号：US18148996

申请日：2022-12-30

Applicant: Analog Devices, Inc.

Inventor： Daniel Piedra ,  James G. Fiorenza ,  Puneet Srivastava ,  Andrew Proudman ,  Kenneth Flanders ,  Denis Michael Murphy ,  Leslie P. Green ,  Peter R. Stubler

IPC: H01L23/66 ,  H01L21/285 ,  H01L21/8252 ,  H01L23/48 ,  H01L27/06 ,  H01L29/20 ,  H01L29/205 ,  H01L29/45 ,  H01L29/66 ,  H01L29/778 ,  H01L49/02 ,  H01L23/532 ,  H01L29/417

Abstract: Gallium nitride-based monolithic microwave integrated circuits (MMICs) can comprise aluminum-based metals. Electrical contacts for gates, sources, and drains of transistors can include aluminum-containing metallic materials. Additionally, connectors, inductors, and interconnect devices can also comprise aluminum-based metals. The gallium-based MMICs can be manufactured in complementary metal oxide semiconductor (CMOS) facilities with equipment that produces silicon-based semiconductor devices.

公开(公告)号：US09878901B2

公开(公告)日：2018-01-30

申请号：US14670829

申请日：2015-03-27

Applicant: Analog Devices, Inc.

Inventor： John A. Geen ,  George M. Molnar ,  Gregory S. Davis ,  Bruce Ma ,  Kenneth J. Cole ,  James Timony ,  Kenneth Flanders

IPC: H01L29/84 ,  B81B3/00 ,  B81C1/00 ,  G01C19/5628 ,  G01P15/08 ,  H04R19/00

CPC classification number: B81B3/0072 ,  B81B2203/0118 ,  B81B2203/0307 ,  B81C1/00325 ,  B81C1/00492 ,  G01C19/5628 ,  G01P15/0802 ,  H04R19/005

Abstract: Thick (i.e., greater than two microns), fine-grained, low-stress tungsten MEMS structures are fabricated at low temperatures, particularly for so-called “MEMS last” fabrication processes (e.g., when MEMS structures are fabricated after electronic circuitry is fabricated). Means for very accurately etching structural details from the deposited tungsten layer and for strongly and stably anchoring the tungsten layer to an underlying substrate are disclosed. Also, means for removing a sacrificial layer underlying the mobile tungsten layer without damaging the tungsten or allowing it to be drawn down and stuck by surface tension is disclosed.

公开(公告)号：US12087713B2

公开(公告)日：2024-09-10

申请号：US18148982

申请日：2022-12-30

Applicant: Analog Devices, Inc.

Inventor： Daniel Piedra ,  James G. Fiorenza ,  Puneet Srivastava ,  Andrew Proudman ,  Kenneth Flanders ,  Denis Michael Murphy ,  Leslie P. Green ,  Peter R. Stubler

IPC: H01L23/66 ,  H01L21/285 ,  H01L21/8252 ,  H01L23/48 ,  H01L27/06 ,  H01L29/20 ,  H01L29/205 ,  H01L29/45 ,  H01L29/66 ,  H01L29/778 ,  H01L49/02 ,  H01L23/532 ,  H01L29/417

CPC classification number: H01L23/66 ,  H01L21/28575 ,  H01L21/8252 ,  H01L23/481 ,  H01L27/0605 ,  H01L27/0629 ,  H01L28/60 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/452 ,  H01L29/66462 ,  H01L29/7786 ,  H01L23/53214 ,  H01L29/4175 ,  H01L2223/6616 ,  H01L2223/6683 ,  H01L2924/1423

Abstract: Gallium nitride-based monolithic microwave integrated circuits (MMICs) can comprise aluminum-based metals. Electrical contacts for gates, sources, and drains of transistors can include aluminum-containing metallic materials. Additionally, connectors, inductors, and interconnect devices can also comprise aluminum-based metals. The gallium-based MMICs can be manufactured in complementary metal oxide semiconductor (CMOS) facilities with equipment that produces silicon-based semiconductor devices.

公开(公告)号：US20150336790A1

公开(公告)日：2015-11-26

申请号：US14670829

申请日：2015-03-27

Applicant: Analog Devices, Inc.

Inventor： John A. Geen ,  George M. Molnar ,  Gregory S. Davis ,  Bruce Ma ,  Kenneth J. Cole ,  James Timony ,  Kenneth Flanders

IPC: B81B3/00 ,  B81C1/00

CPC classification number: B81B3/0072 ,  B81B2203/0118 ,  B81B2203/0307 ,  B81C1/00325 ,  B81C1/00492 ,  G01C19/5628 ,  G01P15/0802 ,  H04R19/005

Abstract: Thick (i.e., greater than two microns), fine-grained, low-stress tungsten MEMS structures are fabricated at low temperatures, particularly for so-called “MEMS last” fabrication processes (e.g., when MEMS structures are fabricated after electronic circuitry is fabricated). Means for very accurately etching structural details from the deposited tungsten layer and for strongly and stably anchoring the tungsten layer to an underlying substrate are disclosed. Also, means for removing a sacrificial layer underlying the mobile tungsten layer without damaging the tungsten or allowing it to be drawn down and stuck by surface tension is disclosed.

Abstract translation: 在低温下制造厚（即大于2微米）的细晶粒，低应力钨MEMS结构，特别是对于所谓的“MEMS最后”制造工艺（例如，当MEMS结构在制造电子电路之后制造时） ）。 公开了用于从沉积的钨层非常精确地蚀刻结构细节并且用于将钨层牢固且稳定地锚定到下面的衬底的手段。 此外，公开了用于去除可移动钨层下方的牺牲层而不损坏钨或允许其被表面张力拉下并卡住的装置。

公开(公告)号：US11569182B2

公开(公告)日：2023-01-31

申请号：US17061075

申请日：2020-10-01

Applicant: Analog Devices, Inc.

Inventor： Daniel Piedra ,  James G. Fiorenza ,  Puneet Srivastava ,  Andrew Proudman ,  Kenneth Flanders ,  Denis Michael Murphy ,  Leslie P. Green ,  Peter R. Stubler

IPC: H01L23/66 ,  H01L27/06 ,  H01L49/02 ,  H01L29/20 ,  H01L29/205 ,  H01L29/45 ,  H01L23/48 ,  H01L21/285 ,  H01L29/66 ,  H01L21/8252 ,  H01L29/778 ,  H01L23/532 ,  H01L29/417

Abstract: Gallium nitride-based monolithic microwave integrated circuits (MMICs) can comprise aluminum-based metals. Electrical contacts for gates, sources, and drains of transistors can include aluminum-containing metallic materials. Additionally, connectors, inductors, and interconnect devices can also comprise aluminum-based metals. The gallium-based MMICs can be manufactured in complementary metal oxide semiconductor (CMOS) facilities with equipment that produces silicon-based semiconductor devices.

公开(公告)号：US20210118871A1

公开(公告)日：2021-04-22

申请号：US17061075

申请日：2020-10-01

Applicant: Analog Devices, Inc.

Inventor： Daniel Piedra ,  James G. Fiorenza ,  Puneet Srivastava ,  Andrew Proudman ,  Kenneth Flanders ,  Denis Michael Murphy ,  Leslie P. Green ,  Peter A. Stubler

IPC: H01L27/06 ,  H01L49/02 ,  H01L29/20 ,  H01L21/285 ,  H01L29/66 ,  H01L21/8252 ,  H01L29/45 ,  H01L23/66 ,  H01L29/205 ,  H01L23/48 ,  H01L29/778

Abstract: Gallium nitride-based monolithic microwave integrated circuits (MMICs) can comprise aluminum-based metals. Electrical contacts for gates, sources, and drains of transistors can include aluminum-containing metallic materials. Additionally, connectors, inductors, and interconnect devices can also comprise aluminum-based metals. The gallium-based MMICs can be manufactured in complementary metal oxide semiconductor (CMOS) facilities with equipment that produces silicon-based semiconductor devices.