CONDUCTIVE INTERCONNECT STRUCTURES INCORPORATING NEGATIVE THERMAL EXPANSION MATERIALS AND ASSOCIATED SYSTMES, DEVICES, AND METHODS

Invention Application

US20150340282A1 CONDUCTIVE INTERCONNECT STRUCTURES INCORPORATING NEGATIVE THERMAL EXPANSION MATERIALS AND ASSOCIATED SYSTMES, DEVICES, AND METHODS 有权

Title translation: 包含负离子热膨胀材料的导电互连结构和相关的综合，装置和方法

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Patent Title: CONDUCTIVE INTERCONNECT STRUCTURES INCORPORATING NEGATIVE THERMAL EXPANSION MATERIALS AND ASSOCIATED SYSTMES, DEVICES, AND METHODS
Patent Title (中): 包含负离子热膨胀材料的导电互连结构和相关的综合，装置和方法
Application No.: US14815560

Application Date: 2015-07-31
Publication No.: US20150340282A1

Publication Date: 2015-11-26
Inventor: Hongqi Li , Anurag Jindal , Jin Lu , Shyam Ramalingam
Applicant: Micron Technology, Inc.
Main IPC: H01L21/768
IPC: H01L21/768 ; H01L21/288

CONDUCTIVE INTERCONNECT STRUCTURES INCORPORATING NEGATIVE THERMAL EXPANSION MATERIALS AND ASSOCIATED SYSTMES, DEVICES, AND METHODS

Abstract:

Semiconductor devices having interconnects incorporating negative expansion (NTE) materials are disclosed herein. In one embodiment a semiconductor device includes a substrate having an opening that extends at least partially through the substrate. A conductive material having a positive coefficient of thermal expansion (CTE) partially fills the opening. A negative thermal expansion (NTE) having a negative CTE also partially fills the opening. In one embodiment, the conductive material includes copper and the NTE material includes zirconium tungstate.

Abstract(Chinese):

本文公开了具有并入负扩张（NTE）材料的互连的半导体器件。在一个实施例中，半导体器件包括具有至少部分延伸穿过衬底的开口的衬底。具有正的热膨胀系数（CTE）的导电材料部分地填充开口。具有负CTE的负热膨胀（NTE）也部分填充开口。在一个实施例中，导电材料包括铜，NTE材料包括钨酸锆。

Public/Granted literature

US09754825B2 Conductive interconnect structures incorporating negative thermal expansion materials and associated systems, devices, and methods Public/Granted day:2017-09-05

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/71	..限定在组H01L21／70中的器件的特殊部件的制造（H01L21/28，H01L21/44，H01L21/48优先）
H01L21/768	...利用互连在器件中的分离元件间传输电流