Invention Application
US20150340372A1 POLAR, CHIRAL, AND NON-CENTRO-SYMMETRIC FERROELECTRIC MATERIALS, MEMORY CELLS INCLUDING SUCH MATERIALS, AND RELATED DEVICES AND METHODS
审中-公开
POLAR，CHIRAL和非中心对称电磁材料，包括这些材料的记忆细胞，以及相关的装置和方法
- Patent Title: POLAR, CHIRAL, AND NON-CENTRO-SYMMETRIC FERROELECTRIC MATERIALS, MEMORY CELLS INCLUDING SUCH MATERIALS, AND RELATED DEVICES AND METHODS
- Patent Title (中): POLAR，CHIRAL和非中心对称电磁材料，包括这些材料的记忆细胞，以及相关的装置和方法
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Application No.: US14282520Application Date: 2014-05-20
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Publication No.: US20150340372A1Publication Date: 2015-11-26
- Inventor: Sumeet C. Pandey , Lei Bi , Roy E. Meade , Qian Tao , Ashonita A. Chavan
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: MICRON TECHNOLOGY, INC.
- Current Assignee: MICRON TECHNOLOGY, INC.
- Current Assignee Address: US ID Boise
- Main IPC: H01L27/115
- IPC: H01L27/115 ; H01L49/02
Abstract:
A ferroelectric memory device includes a plurality of memory cells. Each of the memory cells comprises at least one electrode and a ferroelectric crystalline material disposed proximate the at least one electrode. The ferroelectric crystalline material is polarizable by an electric field capable of being generated by electrically charging the at least one electrode. The ferroelectric crystalline material comprises a polar and chiral crystal structure without inversion symmetry through an inversion center. The ferroelectric crystalline material does not consist essentially of an oxide of at least one of hafnium (Hf) and zirconium (Zr).
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