Embodiments provide a method of growing a p-type nitride semiconductor, and a light emitting device fabricated using the same. The method of growing a p-type nitride semiconductor includes growing a p-type nitride semiconductor layer on a growth substrate by introducing a group III element source, a group V element source, and a p-type dopant into a chamber at a first temperature; and cooling the interior of the chamber from the first temperature to a second temperature, wherein the p-type dopant is introduced into the chamber for at least some part of the cooling of the interior of the chamber from the first temperature to the second temperature. According to the present disclosed technology, it is possible to prevent diffusion of the p-type dopant from a p-type nitride semiconductor layer into the chamber.